MUR20005CT Search Results

MUR20060CT

Abstract: MUR20005CT MUR20010CT MUR20020CT MUR20040CT
Contextual Info: MCC MUR20005CT THRU Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MUR20060CT Features • • • • • 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Supre Fast switching for high efficiency

MUR20005CT thru MUR20020CTR

Contextual Info: Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

diodes SY 200

Abstract: MUR20020CT 357C-03 MUR20005CT MUR20010CT MUR20015CT
Contextual Info: MO TO RO LA SC CDIODES/OPTO b4E D • b3t.7ESS D D ñ b S 3 D TS3 ■ M O T7 MUR20005CT MUR20010CT MUR20015CT MUR20020CT MOTOROLA SEMICONDUCTOR TECHNICAL DATA I) ‘si}>'n(*rs D ata Sheet MUR20020CT i t • Motorola Pr*t*rr*d Devtc* ULTRAFAST SWITCHMODE POWER RECTIFIERS

Contextual Info: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: MUR20005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR20060CT(R) SUPER FAST DIODE MODULE TYPES 200A Features 200 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM TWIN TOWER A R Maximum Ratings B Operating Temperature: -55 C to+175 Storage Temperature: -55 C to +175

ir10 diode

Abstract: MUR20020CT ir10 MUR20020CTR MUR20005CT MUR20010CT diode IR10
Contextual Info: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

k 4026

Abstract: MUR20020CT MUR20060CT 20060CT 20005C MUR200 MUR20040CT
Contextual Info: MCC MUR20005CT THRU
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20060CT Features • • • • • 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Supre Fast switching for high efficiency

357B-01

Abstract: MUR20005CT MUR20010CT MUR20015CT MUR20020CT ad1114 20005C 2001OCT
Contextual Info: g MUR20005CT MUR20010CT MUR20015CT MUR20020CT M OTOROLA SEM ICO N D UCTO RS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 Advance Information ULTRAFAST RECTIFIERS ULTRAFAST SWITCHMODE POWER RECTIFIERS 200 AMPERES 50 TO 200 VOLTS . . . designed fo r use in sw itching pow er supplies, inverters, and

Contextual Info: MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF AV = 200 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

MUR20060CT

Abstract: MUR20020CTr MUR20005CT MUR20010CT MUR20020CT MUR20040CT
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MUR20005CT R THRU MUR20060CT(R) SUPER FAST DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 50-600 Volts Types Up to 600V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MUR20005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR20060CT(R) SUPER FAST DIODE MODULE TYPES 200A Features High Surge Capability Types Up to 600V V rrm 200 Amp Rectifier 50-600 Volts TWIN TOWER 4- A R Maximum Ratings 1 Operating Temperature: -55 C to+175 °C

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.