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Catalog Datasheet | Type | Document Tags | |
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
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NAND16GW3B4D 16-Gbit 2112-byte TSOP48 JESD97 NAND04G-B2D TSOP48 outline | |
JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
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NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit | |
Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■ |
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NAND02G-B2D 2112-byte/1056-word TSOP48 | |
ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
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NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C | |
LGA-52
Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
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NAND04G-B2D, NAND08G-BxC byte/1056 LGA-52 LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint | |
NAND02GW3B2D
Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
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NAND02G-B2D 2112-byte/1056-word TSOP48 VFBGA63 VFBGA63 NAND02GW3B2D NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI NAND02GW3B2D-N | |
nand64Contextual Info: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area |
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NAND64GW3FGA 64-Gbit 4224-byte nand64 | |
NAND64GW3FGA
Abstract: NAND64G 64Gbit NUMonyx NAND64G
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NAND64GW3FGA 64-Gbit 4224-byte NAND64GW3FGA NAND64G 64Gbit NUMonyx NAND64G | |
C7478Contextual Info: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage |
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NAND08GW3F2B 4224-byte C7478 | |
NAND16GW3F4A
Abstract: 16G nand
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NAND16GW3F4A 16-Gbit 4224-byte NAND16GW3F4A 16G nand | |
LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
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NAND08GW3C2B NAND16GW3C4B TSOP48 LGA52 LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B | |
AN2664
Abstract: NAND01G-B2B nand flash ONFI 3.0 slc nand nand ONFI 3.0 AN266 NAND02G-B2C NAND02G-B2D NAND04G-B2D NAND flash memory
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AN2664 AN2664 NAND01G-B2B nand flash ONFI 3.0 slc nand nand ONFI 3.0 AN266 NAND02G-B2C NAND02G-B2D NAND04G-B2D NAND flash memory | |
NAND16GW3D2A
Abstract: C5761 2112B
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NAND16GW3D2A 16-Gbit, 4224-byte NAND16GW3D2A C5761 2112B | |
Contextual Info: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area |
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NAND64GW3FGA 64-Gbit 4224-byte | |
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NAND02GR3B2DContextual Info: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications |
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NAND02G-B2D byte/1056 TSOP48 NAND02GR3B2D | |
xicor
Abstract: XM28C040P
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XM28C040P --150ns, 200ns, 250ns Size--64 xicor XM28C040P | |
LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
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NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258 | |
NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
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NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60 | |
Contextual Info: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area |
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NAND16GW3C4B 16-Gbit 2112-byte | |
16G nandContextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage |
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16-Gbit, 4224-byte 16-Gbit 16G nand | |
NAND16GW3F4AContextual Info: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage |
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NAND16GW3F4A 16-Gbit 4224-byte NAND16GW3F4A | |
NUMONYX DDR
Abstract: NAND16GW3D2B
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NAND16GW3D2B 16-Gbit, 4320-byte NUMONYX DDR NAND16GW3D2B | |
Contextual Info: 4 Megabit Puma Module XM28C040P 512K x 8 Bit High Density 5 Volt Byte Alterable Nonvolatile Memory Array FEATURES DESCRIPTION • High Density Memory Module — 150ns, 200ns, and 250ns Access Times Available — 4 Megabit Memory in 1 square inch. • Flexible Multiplane Architecture |
OCR Scan |
XM28C040P 150ns, 200ns, 250ns | |
64Gbit
Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
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NAND64GW3D4A 64-Gbit 4224-byte 64Gbit NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G |