MULTILAYER CERAMIC CAPACITOR 10 UF TDK Search Results

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Open Mode Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 003-01 / 20130929 / mlcc_commercial_openmode_en MULTILAYER CERAMIC CHIP CAPACITORS

c3216x7r TDK

Abstract: c3216x7r1c475 C5750X5R1A686M c3216x5r C5750X5R0J107M C3216X5R1A475 C3216X7R1C105K capacitor 1000 uf 25v C5750X5R1C476M C3216X7R1C225
Contextual Info: TDK Hi Caps TDK Electronics Europe GmbH Head Office Wanheimer Straße 57 D - 40472 Düsseldorf, Germany Tel: 49 - 211 - 90 77-0 Fax: 49 - 211 - 41 49 84 E-mail: info@tdk.de TDK Electronics Italy Centro Commerciale Milano Est Scala H, Piano 1, Via Tolstoi 86

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Commercial Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130929 / mlcc_commercial_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Automotive Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130930 / mlcc_automotive_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Oct 2013 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Jan 2014 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Aug 2013 C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] CKCN27 [EIA CC0302]

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805] Issue date:

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]

Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

BLF6G10LS-160RN

Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

BLF6G22LS-75

Abstract: RF35
Contextual Info: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

SmD TRANSISTOR a41

Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

BLF6G22LS-100

Abstract: RF35
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

BLF888A

Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

Contextual Info: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Soft Termination Type: C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] Issue date: Mar 2014

Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] Issue date: Mar 2014 007-01 / 20140402 / mlcc_automotive_soft_en-01

d2375

Abstract: BLF6G10S-45 RF35
Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.