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BLF6G10S-45
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NXP Semiconductors
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UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB | 
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PDF
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126.15KB | 
10 | 
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BLF6G10S-45
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NXP Semiconductors
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BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | 
Original | 
PDF
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171.16KB | 
11 | 
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BLF6G10S-45,112
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 23DB SOT608B | 
Original | 
PDF
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845.73KB | 
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BLF6G10S-45,112
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NXP Semiconductors
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UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB; Package: SOT608B (CDFM2); Container: Bulk Pack | 
Original | 
PDF
 | 
126.15KB | 
10 | 
| 
BLF6G10S-45,112
 | 
 | 
NXP Semiconductors
 | 
BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | 
Original | 
PDF
 | 
171.16KB | 
11 |