MULTI CHIP PACKAGE Search Results

ty9000

Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Contextual Info: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous

ty9000

Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Contextual Info: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

ty9000

Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
Contextual Info: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

toshiba NAND ID code

Abstract: TH50VPN5640EBSB bad block PSEUDO SRAM
Contextual Info: TH50VPN5640EBSB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VPN5640EBSB is a mixed multi-chip package containing a 32-Mbit 33,554,432 bit pseudo static RAM

TY9000

Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
Contextual Info: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

lqfp 64 Shipping Trays

Abstract: DS310H
Contextual Info: LEADFRAME data sheet Multi-Chip & Stacked-Die Leadframe Packages Features: Multi-Chip Package MCP & Stacked-Die Leadframe Package Amkor's multi-chip package and stacked-die leadframe designs enable package level integration in a low cost, leadframe-based form factor. Leveraging

PSRAM

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Contextual Info: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

2N2222A plastic package

Abstract: transistor equivalents for 2n2222a NPN transistor 2n2222A plastic package FM362 fighter 2N2222A A1006 LE17 U3158 FM36235
Contextual Info: Multi Chip Arrays High density solutions for power and small signal circuits Multi Chip Arrays Integrated Discrete Components Multi Chip Arrays MCAs integrate several semiconductor die or other components into one package to provide a light and improved-reliability alternative to discrete circuits.

TYAD00AC00BUGK

Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
Contextual Info: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices

M69KR096A

Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
Contextual Info: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

nor flash 1.8V

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

M30L0T7000T0

Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
Contextual Info: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM

8a21

Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Contextual Info: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION

7900f-d

Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

TFBGA105

Abstract: TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

M30L0R8000T

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

M69KB096AB

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

PSRAM

Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory

M58LT128HT

Abstract: Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit
Contextual Info: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multi-Level, Burst Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

ba1s

Abstract: a19t TH50VSF1480AASB TH50VSF1481AASB
Contextual Info: SFP- I TOSHIBA Multi Chip Package SRAM & FLASH Memory 2M BIT SRAM X 8/X 16 16M BIT FLASH ( X 8/ X 16) Data Sheet TOSHIBA TH 50VSF1480/1481A A S B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE

TFBGA105

Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
Contextual Info: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)

Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM