16PAGES Search Results

K9S2808V0C

Abstract: K9S6408V0C K9S5608V0X
Contextual Info: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing

TIB0

Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

date code marking samsung

Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
Contextual Info: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary

cmos static ram 1mx8 5v

Contextual Info: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V

SmartMedia Logical Format

Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
Contextual Info: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia

Contextual Info: Advanced Information SmartMediaTM K9S3208V0B-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

K9F3208W0A-TCB0

Contextual Info: K9F3208W0A-TCB0, K9F3208W0A-TIB0 FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 Advanced Information Final 1 Added CE don’t care mode during the data-loading and reading

Samsung 6v 6 pin camera

Contextual Info: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes

Contextual Info: SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue 0.1 1. Changed the following items ITEM Before M-die After(A-die) Program Time 1,000us(Max.) 500us(Max.) 0.8V and 2.0V 1.5V Input and output timing levels

Contextual Info: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.

K9F6408U0C-Q

Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

gd243

Contextual Info: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999 Final

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

M29W8000

Contextual Info: Preliminary KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M X 8 bit NAND Flash Memory Revision History Revision NPr History 0.0 1.0 Data Sheet 1997 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. -> 2ms(Typ.) 10ms(Max.) -> 4ms(Max.) 2. Changed tPRO G param eter: 1,5ms(Max.) -> 1 Oms(Max)

Contextual Info: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

Contextual Info: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.

TS 4142

Abstract: ro1f
Contextual Info: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

A17-A22

Contextual Info: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase

KM29N16000AT

Abstract: KM29N16000AIT KM29V16000 KM29N16000A
Contextual Info: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.

SMFV002

Abstract: "bad block" smartmedia ecc SMFN002
Contextual Info: SmartMediaTM SMFV002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.

KM29V16000ATS

Abstract: KM29V16000
Contextual Info: KM29V16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.