MUBW3512E7 Search Results

35N120D1

Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

Contextual Info: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C

ds 35-12 e

Contextual Info: Advanced Technical Information MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V

E72873

Abstract: MJ 52 Diode
Contextual Info: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 E72873 See outline drawing for pin arrangement Features t IGBTs Maximum Ratings VCES TVJ = 25°C to 150°C

50-12BD

Abstract: D-68623
Contextual Info: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C

Contextual Info: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C

D-68623

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH

D 35-12 equivalent

Abstract: ds 35-12 e
Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A

DIODE 0644

Abstract: 35N120D1 IXER 35N120D1 diode RG 39
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C

35N120D1

Abstract: D-68623 8200T u2003
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

160 e7

Abstract: E72873 t6910
Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 Three Phase

E72873

Contextual Info: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 E72873 See outline drawing for pin arrangement Features IGBTs Symbol Conditions Maximum Ratings

40N120

Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

50-12BD

Abstract: D-68623 TF010 400TD
Contextual Info: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM

D-68623

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

40N120

Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C

35N120D1

Abstract: 35n120
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

T 3512 H diode

Abstract: diode T 3512 H ds 35-12 e E72873 6002e
Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 NTC T5 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A

T 3512 H diode

Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 T3 17 D2 T2 D5 20 NTC T5 8 19 6 15 3 D3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase

HIPERFAST IGBT WITH DIODE

Abstract: ds 35-12 e
Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A

DIODE 0644

Abstract: 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C

diode T 3512

Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A