MTH30N25E
Abstract: 84ac 2N3904 AN569
Contextual Info: Order this data sheet by MTH30N25E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data sheet ~esigner’s MTH30N25E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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mth30n25e/dmth30n25eo-218ac84ac+22n3904an569
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motorola diode 739
Abstract: motorola 739 S3892 A54 ZENER DIODE CQ 521
Contextual Info: MOTOROLA SC - CXSTRS/ R F> ShE D • L>3b?a54 □ Q'JQTÎÜ Order this data sheet by MTH30N25E/D 3 MOTOROLA es SEMICONDUCTOR essi TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET IM-Channel Enhancement-Mode Silicon Gate TM O S PO W ER FET
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mth30n25e/dl1t30mth30n25emotorola diode 739+4motorola 739s3892a54 zenerdiode cq 521
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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k 3561 MOSFET
Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con
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dk101o-22qabk 3561 mosfettp5n05+8buz80a equivalentp20n50p12n08nx 9120tp3n40fd1z0irfz22 mosfetth15n20
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MTH13N50
Abstract: 218AC MTH6K MTH20P08 MTH35N06 MTH35N15 MTH50N05E MTH8N90 TO218AC MTH15N35
Contextual Info: - m m £ tt * Vos or € £ Vg s V W. (Ta=25‘ C) ÍD Ig s s Pd Vg s Jd s s th) xi fà ft 1D S ( o n ) Vd s = 'te (V) * /CH * /CH (A) (W) (nA) Vg s (V) (HA) Vd s (V) min m ax (V) (V) g fs iD(on) Ciss Coss Crss & m m n V g s =0 (max) Id (mA) *typ (0) Vg s
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mth6k90o-218acmtk8p18t0-218ac+14mth8p20hth13n45mth40n05mth40n06mth13n50218acmth6kmth20p08mth35n06mth35n15mth50n05emth8n90to218acmth15n35
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
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mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50
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MTH30N25
Abstract: k15a
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FET 30 AMPERES This TM O S Power FET is designed fo r high speed p o w e r s w itc h ing a p p lica tio n s such as s w itc h in g regu la to rs, co nve rters, so lenoid
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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