MTB1 Search Results

AN569

Abstract: MTB16N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TB1N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB1N100E TM OS E-FET™ High Energy Pow er FET D 2 p a k for S urface Mount Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MTB10000-UR-A 10 SEGMENT LIGHT BAR 10 SEGMENT LIGHT BAR MTB10000-UR-A Dimensions 22.86 8.0 1.78

Contextual Info: Marktech Bar Graph Array 10 Segment Features Solid state reliability Series Line−Up Part Number Color Material MTB10000−G Yellow Green GaP MTB10000−HR High Efficiency Red GaAsP MTB10000−O High Efficiency Red GaAsP MTB10000−RG Red GaP MTB10000−UR

b15n06v

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTB15N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an orv-resistance

EUROFARAD capacitor

Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.

CK 77- 94V-0 cam

Abstract: 390101302B FR116 fr022 AL57C FR116C CK 77 94V-0 cam CK 77 94V-0 6 pin MTB-1 BL57
Contextual Info: Microminiature Connectors Type MTB1 Space High performance Microminiature connectors, ESA qualified, for space applications. Space/High reliability MTB1 connectors meet stringent tests for outgassing and residual magnetism and are suitable for use in space, medical, and high performance

AN569

Abstract: MTB10N60E7 MTB10N60E7T4
Contextual Info: MTB10N60E7 Preferred Device Advance Information TMOS 7 E-FET  High Energy Power FET N–Channel Enhancement–Mode Silicon Gate http://onsemi.com The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in

AN569

Abstract: MTB1N100E SMD310
Contextual Info: MOTOROLA Order this document by MTB1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB1N100E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS on = 9.0 OHM N–Channel Enhancement–Mode Silicon Gate

SOT-323* "power supplies"

Abstract: 2N3904 AN569 MTB15N06E SMD310
Contextual Info: MOTOROLA Order this document by MTB15N06E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB15N06E Motorola Preferred Device TMOS POWER FET 15 AMPERES RDS on = 0.12 OHM 60 VOLTS N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB15N06V SMD310
Contextual Info: MOTOROLA Order this document by MTB15N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB15N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: Marktech Bar Graph Array Bi−Color Features Solid state reliability Hi−efficiency red and green Grey surface/white epoxy Series Line−Up Part Number Color Material MTB10062−HRG High Efficiency Red GaAsP Yellow Green GaP Maximum Ratings (Ta=25oC) Part Number

Contextual Info: MTB10000-Y-A White Diffused - Standard LEDs SELECTOR GUIDE Part Number Dice Lens Color / Type Pack Size View Angle 2θ 1/2 MTB10000-Y-A Yellow White Diffused Bar Graph 10 Seg 0° ELECTRICAL / OPTICAL CHARACTERISTICS AT T A=25°C Parameter Forward Voltage

Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E -F E T MTB1306 High Density Power FET D2PAK for Surface Mount TM OS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM N-Channel Enhancement-Mode Silicon Gate

12110

Contextual Info: MTB10000-HR-A Red Diffused - Standard LEDs SELECTOR GUIDE Part Number Dice Lens Color / Type Pack Size View Angle 2θ 1/2 MTB10000-HR-A Orange Red Diffused Bar Graph 10 Seg 0° ELECTRICAL / OPTICAL CHARACTERISTICS AT T A=25°C Parameter Forward Voltage Reverse Current

Contextual Info: MTB10000-G-A White Diffused - Standard LEDs SELECTOR GUIDE Part Number Dice Lens Color / Type Pack Size View Angle 2θ 1/2 MTB10000-G-A Green White Diffused Bar Graph 10 Seg 0° ELECTRICAL / OPTICAL CHARACTERISTICS AT T A=25°C Parameter Symbol Device Min.

Semen

Abstract: MTB10631-GYHR
Contextual Info: Tri Color 10 Sement Light Bar MTB10631−GYHR Features Solid state reliability Hi−efficiency red and green Grey surface/white epoxy o Maximum Ratings Ta=25 C Characteristic Symbol Max. Unit YG YL HR Forward Current IF 30 30 30 Reverse Voltage VR 5 5 5

Contextual Info: MTB10000-G-A 10 Segment Green Bar Graph Display Company Headquarters - 3 Northway Lane North - Latham, New York 12110 - Toll Free: 800.984.5337 - Fax: 518.785.4725 California Sales Office - 950 South Coast Drive, Suite 225 - Costa Mesa, California 92626 - Toll Free: 800.984.5337 - Fax: 714.850.9314

Contextual Info: Marktech Bar Graph Array Bi−Color Features Solid state reliability Hi−efficiency red and green Grey surface/white epoxy Series Line−Up Part Number Color Material MTB10062−HRG High Efficiency Red GaAsP Yellow Green GaP Maximum Ratings (Ta=25oC) Part Number

MTB10000

Abstract: MTB10000-G
Contextual Info: Marktech Bar Graph Array 10 Segment Features Solid state reliability Series Line−Up Part Number Color Material MTB10000−G Yellow Green GaP MTB10000−HR High Efficiency Red GaAsP MTB10000−O High Efficiency Red GaAsP MTB10000−RG Red GaP MTB10000−UR

EUROFARAD capacitor

Abstract: EUROFARAD cec EUROFARAD MTB10010U SC15 Pulse Capacitor Eurofarad
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.

Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Metal I.D. Tags and Collars PSL-TG1 MTB1D-Q PSL-SC Part Number PSL-TG1 PSL-SC MTB1D-Q MT172W38-C Part Description Brass padlock identification tag. Padlock shackle collar and rivet. Marker tag, 1.00" circular, brass.

10n40e

Abstract: 10N40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB10N40E TM O S E -F E T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon CSate The D2PAK package has the capability of housing a larger die