MT3 Search Results

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

diode 16c

Abstract: OD-663
Contextual Info: OPTO DIODE CORP SSE D bûOmfl OOOOllfi MT3 • O P D ' 7 ^ ¿ / 7 - / ^ HIGH-POWER GaAIAs IRLED ILLUMINATOR OD-663 FEATURES • High reliability LPE GaAIAs IRLEDs • Super high power output • 880nm peak emission • Three chips connected in series • TO-66 header for good heat dissipation

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

l-11766

Contextual Info: Applications Include Small Toroid RF Chokes Satellite Communications Microwave Equipment Broadcast TV Cable TV Systems Miniature Two Lead Thru-hole Packages Test Equipment Excellent Electrical Performance - High Q A M /EM Radio MT1 MT2 MT3 L W Scanners H 0.210

4274v50

Abstract: TLE4274V50 Q67000-A9256 Q67000-A9257 Q67000-A9258 Q67006-A9259 Q67006-A9260 Q67006-A9261 P-T0220-3-1 TLE4274
Contextual Info: SIEMENS " a23Sb0S Mt3 jl_ g 4274 L o w -D ro p V o lta g e R e g u la to r Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof • Suitable for use in automotive electronics

014E

Abstract: 200E 800E MT3S05T
Contextual Info: MT3S05T SPICE parameters UCB SPICE2G6 20020513 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S05T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19

MT3S03AT

Abstract: 014E 200E 800E
Contextual Info: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0

Contextual Info: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •

MT3S16U

Abstract: 371E-01 PTF-1 465E-01 427E-01
Contextual Info: MT3S16U（USM SPICE_PARAMETERS・・UCB-SPICE2G6 2003/8/6 NET_LIST .SUBCKT T3S16U 1 2 CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN NPN + IS = + BF = + NF = + VAF = + IKF = + ISE = + NE = + BR = + NR = + VAR = + IKR = + ISC =

cbc 327

Abstract: BF 998 equivalent
Contextual Info: MT3S18T SPICE2G6 model parameters 20010806 NET LIST .SUBCKT MT3S18T 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN NPN + IS = + BF = + NF = + VAF = + IKF = + ISE = + NE = + BR = + NR = + VAR = + IKR = + ISC =

210E

Abstract: 600E MT3S06FS 1200E-01
Contextual Info: MT3S06FS SPICE parameters UCB SPICE 2G6 20020704 NET LIST .SUBCKT MT3S06FS 1 2 3 Le1 Le2 Ceg1 Ceg2 Lb1 Lb2 Cbg1 Cbg2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 3 6 6 9 6 0 9 0 2 5 5 8 5 0 8 0 1 4 4 7 4 0 7 0 5 6 7 8 7 9 9 20 12 20 8 17

014E

Abstract: 200E 800E MT3S37T
Contextual Info: MT3S37T SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S37T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19

H-14

Abstract: H-17 MT16LD1664A MT32LD3264A MT8LD864A DF27 MT4LC16M4H9
Contextual Info: 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE MT8LD864A X, MT16LD1664A X, MT32LD3264A X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM (H-14; 64MB)

Contextual Info: T O SH IB A TENTATIVE MT3S04S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .

Contextual Info: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

Contextual Info: TOSHIBA MT3S03 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 8 dB at f = 2 GHz MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A TENTATIVE MT3S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 3 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll