MT28F160 Search Results

MT28F160A3

Abstract: FW310 FW311
Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

fw610

Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

TOP SIDE MARKING OF MICRON

Contextual Info: ADVANCE I OUrtNTUM DEVlCtS. l-;c; 1 MEG x 16 ADVANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 FEATURES PIN ASSIGNMENT Top View 48-Pin TSOP Type I (FB-2) • Thirty-nine erase blocks: Two 4K-word boot blocks (protected) Six 4K-word parameter blocks

FW310

Abstract: FW311 fy310 FX312 FX310
Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

fw610

Contextual Info: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

FX615

Abstract: C8000H MT28F160C34 micron flash otp
Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C34 FEATURES • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP

MT28F160S3RG-10

Contextual Info: PRELIMINARY 2 MEG x 8/1 MEG x 16 SMART 3 EVEN-SECTORED FLASH FLASH MEMORY MT28F160S3 FEATURES PIN ASSIGNMENT Top View • x8/x16 organization • Thirty-two 64KB erase blocks • VCC and VPP voltages: 3V–3.6V VCC operation, 75ns (MIN) access time 2.7V–3.6V VCC operation, 100ns (MIN)

fw610

Abstract: MT28F160C3FD-9 BET TRS-150 MT28F160C3 TOP SIDE MARKING OF MICRON micron flash otp
Contextual Info: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

flash 48pin dqs

Contextual Info: M ICRON I QUANTUM Devices, HC. ADVANCE 1 MEG x 16 A D V A N C E D B O O T BL O C K FLASH M E M O R Y MT28F160A3 FLASH MEMORY Sm art 3 FEATURES * * * * * * * * * * PIN A S S I G N M E N T Top View Thirty-nine erase blocks: Two 4K-word boot blocks (protected)

Contextual Info: OBSOLETE ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 FLASH MEMORY SMARTVOLTAGE SVT-II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect

MT28F160A3

Contextual Info: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks

C8000H

Contextual Info: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks

Contextual Info: ADVANCE ;Ü iiü U FLASH MEMORY MT28F160A3 Smart 3 FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • Smart 3 voltage flexibility: 2.7V to 3.6V Vcc 2.7V to 3.6V or 12V* V fp

FY712

Abstract: MT28F160A18 MT28F320A18
Contextual Info: ADVANCE‡ 1 MEG x 16/2 MEG x 16 1.8V ENHANCED BOOT BLOCK FLASH MEMORY + FLASH MEMORY MT28F160A18/ MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES BALL ASSIGNMENT 48-Ball FBGA • 16Mb block architecture Thirty-nine erasable blocks:

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

FT18

Abstract: MT28F160C3 MICRON fBGA package code FT18P TN-28-18
Contextual Info: TN-28-18 3V ENHANCED+ BOOT BLOCK COMPATIBILITY TECHNICAL NOTE MICRON-INTEL 3V ENHANCED+ BOOT BLOCK FLASH COMPATIBILITY INTRODUCTION MANUFACTURER AND DEVICE ID CODES Micron’s 16Mb enhanced+ boot block flash device is a nonvolatile, electrically block-erasable flash , programmable, read-only memory containing 16,777,216

MT28F160S2

Contextual Info: ADVANCE I^ IIC R D N M T28F160S2 1 MEG x 16. 2 MEG x 8 FLASH M EM O R Y FLASH MEMORY 1 MEG x 16, 2 MEG x 8 S m a r t V o lt a g e SVT-II , SECTORED ERASE • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 6 4 K B / (32K-word) erase blocks

MT28F320J3

Abstract: MT28F640J3
Contextual Info: TN-28-27 EVEN-SECTORED FLASH vs. SIRUSFLASH TECHNICAL NOTE MIGRATING FROM SMART 3 EVEN-SECTORED FLASH TO SIRUSFLASHTM MEMORY This article was originally published in 2000. drop-in replacements for Intel StrataFlash and FlashFile families. Figure 1 shows a pinout comparison

Device-List

Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Contextual Info: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera

NEC D2732D

Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
Contextual Info: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44

39SF020A

Abstract: 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ
Contextual Info: Labtool-148C Version 3.30 <ALL> Device List ACTRANS AC29LV400B *44PS AC29LV400B *48TS ALi M6759 *44 M8720 Page 1 of 13 AC29LV400T *44PS AC29LV400T *48TS Alliance AS29F040 AS29LV400T *48TS AS29LV800T *48TS AS29LV400B *44PS AS29LV800B *44PS AS29LV400B *48TS

atc 93lc46

Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
Contextual Info: LabTool-48XP Version 5.60 <ALL> Device List Page 1 of 23 ACTRANS AC29LV400B *44PS AC39VF080 *40TS AC29LV400B *48TS AC39VF088 *48TS AC29LV400T *44PS AC39VF800 *48TS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV400B *48TS