MT1002 Search Results

hamming code

Abstract: 8 bit hamming code micron DRAM
Contextual Info: •T V IICRON TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 (Micron 1W fMEG DRAM Family) ' , . S fo * ' ' ’• /A? ju a MT1001, MT1002 (1,048,576 x i ) b it DYNAMIC RAM r / Î f ^ Ô , M T 4 2 5 7 ^ ? ? ^ 262,144 x 4 BIT DYNAMIC RAM

Contextual Info: MT10D25640 256K X 40 DRAM MODULE |U |IC = R O N 256K x 40 DRAM FAST PAGE MODE MT10D25640 LOW POWER, EXTENDED REFRESH (MT10D25640 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.

Contextual Info: MT10D25636 256K X 36, 512K x 18 DRAM MODULE M IC R O N DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES • • • p ackage H ig h -p erfo rm an ce, C M O S silico n -g a te process. S in g le 5 V ± 1 0 % p o w er sup p ly A ll d e v ice p in s a re fu lly T T L co m p atib le

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

hamming code

Abstract: micron DRAM MT4256Z-12
Contextual Info: ;î V IICRON TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 (Micron 1 MEG DRAM Family) We're building our reputation on innovation. FEATURES ^ PIN ASSIGNMENT (TOP VIEW) m ~ y c - •' ■■. ■■ - ' /,

CQ649

Abstract: c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents HABANA CPU :Intel Yonah -2M/1M

ICC-427

Contextual Info: M IC R O N 256K DRAM X MT10D25640 40 DRAM M ODULE 256K x 40 DRAM _ MOD ULF L / V / I— ! — I V I W FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process. Single 5V ±10% power supply All device pins are fully TTL compatible

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

Contextual Info: M ir “ O n N I 256K DRAM MODULE X 36, 512K X MT10D25636 18 DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 10D25636M /G Itmmrrrm^ „ iïrmrrmrrrri^ ^ MARKING • Timing 60ns access 70ns access 80ns access -