MT1001 Search Results

hamming code

Abstract: 8 bit hamming code micron DRAM
Contextual Info: •T V IICRON TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 (Micron 1W fMEG DRAM Family) ' , . S fo * ' ' ’• /A? ju a MT1001, MT1002 (1,048,576 x i ) b it DYNAMIC RAM r / Î f ^ Ô , M T 4 2 5 7 ^ ? ? ^ 262,144 x 4 BIT DYNAMIC RAM

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

Contextual Info: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)

hamming code

Abstract: micron DRAM MT4256Z-12
Contextual Info: ;î V IICRON TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 (Micron 1 MEG DRAM Family) We're building our reputation on innovation. FEATURES ^ PIN ASSIGNMENT (TOP VIEW) m ~ y c - •' ■■. ■■ - ' /,

CQ649

Abstract: c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents HABANA CPU :Intel Yonah -2M/1M

Contextual Info: [M IC R O N 1 MEG □RAM . _ MODULE W W MT10D140 40 DRAM MODULE 1 MEG x 40 DRAM _ _ ^ •■I w X FAST PAGE MODE MT10D140 lo w p o w e r, FEXTENDED Y T F N in P n RREFRESH F (MT10D140 L) L .I— FEATURES PIN ASSIGNMENT (Top View) 72-pin single-in-line package

Contextual Info: DRAM MODULE 1 MEG x 40 DRAM FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process. Single 5V ±10% pow er supply All device pins are fully TTL compatible

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • I^IICRON bi ll5 ^ 1 MEG X QOOftlbfl 535 ■ MRN MT10D140 40 DRAM MODULE 1 MEG X 40 DRAM DRAM MODULE FAST-PAGE-MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES • • • • • • • OPTIONS MARKING • Timing

Contextual Info: I^ IIC R O N 1 MEG DRAM MODULE 1 MEG X X MT10D140 40 DRAM MODULE 40 DRAM FAST-PAGE-MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES PIN ASSIGNMENT (Top View) • 72-p in sin g le-in -lin e p ack ag e • • • • • • OPTIONS 72 -Pin

Contextual Info: I^ IIC Z R O N X M T10D140 40 DRAM M ODULE 1 MEG x 40 DRAM _ FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) F I . FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CM OS silicon-gate process. Single 5V ±10% power supply

Contextual Info: [M IC R O N 1 MEG X MT10D140 40 DRAM MODULE 1 MEG x 40 DRAM □PAM MODULE FAST-PAGE-MODE MT10D140 LOW POWER, POWER, LOW EXTENDED REFRESH (MT10D140 L) FEATURES • • • • • • • OPTIONS (DE-13) M T 10D 140G • Packages Leadless 7 2 -pin SIMM (gold)