MSM5117805 Search Results

free diode LN 4148 datasheet

Abstract: MSM5117805B
Contextual Info: ¡ Semiconductor MSM5117805B ¡ Semiconductor MSM5117805B E2G0047-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power

Contextual Info: FJDD5117805F-01 1電子デバイス MSM5117805F 今回作成：2000 年 11 月 前回作成： 2,097,152-Wordx8-Bit DYNAMIC RAM : EDO 機能付き高速ページモード • 概要 MSM5117805F はCMOS プロセス技術を用いた 2,097,152 ワード×8 ビット構成のダイナミックラン

Contextual Info: O K I Semiconductor MSM5 1 17805B_ E2G 0047-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power

MSM5117805C

Abstract: SOJ28 MSM5117805
Contextual Info: J2G0113-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5117805C l MSM5117805C 暫定 2,097,152-Wordx8-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM5117805CはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

ra435

Abstract: MSM5117805 MSM5117805C
Contextual Info: E2G0113-18-42 O K I Semiconductor MSM5 1 17805C This version: A pr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805C is a 2,097,152-w ord x 8-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805C achieves high integration, high-speed operation, and low-power

MSM5117805

Abstract: MSM5117805D
Contextual Info: Semiconductor This version:Apr.1999 MSM5117805D 2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805D is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption

M5117805

Abstract: MSM5117805 MSM5117805B tsop l9
Contextual Info: O K I Semiconductor MSM5 1 17805 B_ E 2 G 0 0 4 7 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power

Contextual Info: E2G0113-18-42 O K I Semiconductor M SM This version: Apr. 1998 5 1 17 8 0 5 C 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805C achieves high integration, high-speed operation, and low-power

MSM5117805F

Abstract: MSM5117805
Contextual Info: FEDD5117805F-01 1Semiconductor MSM5117805F This version: November. 2000 Previous version :  2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM5117805 B_ E2G0047-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117S05B achieves high integration, high-speed operation, and low-power

MSM5117805F

Abstract: MSM5117805 PEDD5117805F-01
Contextual Info: PEDD5117805F-01 1Semiconductor MSM5117805F This version: May. 2000 Previous version :  Preliminary 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM5117805A

Contextual Info: O K I Semiconductor_ M S M 5 1 1 7 8 0 5 A _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power

MSM5117805

Abstract: MSM5117805A
Contextual Info: O K I Semiconductor MSM5 1 17805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynam ic RA M fabricated in O K I's C M O S silicon gate technology. The MSM51178G5A achieves high integration, high-speed operation, and low-power

MSM5117805

Abstract: MSM5117805D 5117805D
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117805D 2,097,152-Word x 8-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 MSM5117805D はCMOS プロセス技術を用いた 2,097,152 ワードx8 ビット構成のダイナミックラ

Contextual Info: J2G0047-17-41 作成：1998年 1月 MSM5117805B l 前回作成：1997年 5月 ¡ 電子デバイス MSM5117805B 2,097,152-Wordx8-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM5117805BはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

5117805

Contextual Info: O K I Semiconductor_ MSM5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

MSM5117805F

Abstract: MSM5117805
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM5117805

Abstract: MSM5117805B SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM5117805

Abstract: MSM5117805C SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

FJDD5117805F-02

Abstract: MSM5117805 MSM5117805F
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株