MSM511000A Search Results

MSC2313A-80YS8

Contextual Info: O K I semiconductor MSC2313A-xxYS8/KS8_ 1,048,576 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2313A-xxYS8/KS8 is a fully decoded, 1,048,576 word x 8 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM511000AJS . The mounting of eight SOJs

MSM511000A-8A

Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Contextual Info: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor MSM511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech­

Contextual Info: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.

511000A

Abstract: M511000A
Contextual Info: O K I semiconductor MSM511000A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1000A is a new generation dynam ic RAM organized as 1,048,576 w o rds x 1 bit. The tech nolog y used to fabricate the M S M 5 1 1000A is O K I's C M O S silicon gate process technology.

OKI MSC2312A-80YS9

Abstract: MSC2312A-80YS9 MSC2312A-10YS9 MSC2312A80YS9 E2117
Contextual Info: 4bE D • b 7 2 4 2 M 0 0 0 1 0 2 û b 233 « O K I J OKI gem iconcluctor y > *11 MSC2312A-xxYS9 KS9_ 1,048,576 Word BY 9 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE O K I S E M I C O N D U C T O R GROUP GENERAL DESCRIPTION The Oki MSC2312A-xxYS9/KS9 is a fully decoded, 1,048,576 word X 9 bit CMOS dynamic random

Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

Contextual Info: O K I semiconductor MSC2320A-XXYS9 262, 144 BY 36BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2320A-XXYS9 is a fully decoded, 262,144 words X 36 bit CMOS dynamic random access memory composed of eight 1 Mb DRAMs in SOJ MSM514256AJS and four 256 Kb drams in

511000

Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
Contextual Info: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

Wi 67

Contextual Info: O K I semiconductor T~HC~2>i~1& 4bE D • b?2HH4Q QQI QBBT Hl? « O K U MSC2313A-xxYS8/KS8_ 1,048,576 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2313A-xxYS8/KS8 is a fully decoded, 1,048,576 word x 8 bit CMOS dynamic random

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

MSM6388

Abstract: J380 1h 514100A M6588 MSM6588 MSM6691 MSM6691GS-2K m514100a 529A1
Contextual Info: ¡ Semiconductor MSM6691 ¡ Semiconductor MSM6691 DRAM Interface IC GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R/W Read/Write ICs, the MSM6388, and the MSM6588. The MSM6691 translates the signals

24 pin 16mbit DRAM

Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
Contextual Info: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)

darm

Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

cn137

Abstract: MSC2313A-8AYS8
Contextual Info: 4bE » • fcj72424D Q O D T b a S O K I SEMICONDUCTOR 24fl « O K I J GROUP O K I semiconductor MSC2313A-XX YS8/KS8 S 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2313A-XX YS8/KS8 is a fully decoded, 1,048,576 w o rdsx8 bit CMOS dynamic random

Contextual Info: OKI M semiconductor S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random access memory composed of sixteen 1 Mb DRAMs in SOJ MSM514256AJS and eight 256 Kb drams

playback recorder

Abstract: VOICE RECORDER IC MSM6788 MSM6789A MSM6789L MSM5116100A
Contextual Info: ¡ Semiconductor MSM6789A/6789L ¡ Semiconductor MSM6789A/6789L SBC Solid-State Recorder IC GENERAL DESCRIPTION The MSM6789A/6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the MSM6789A/6789L has a stand-alone mode and a microcontroller interface

511000

Abstract: MT401024 511000 cmos 18PIN MN41C1002L-8 MN41C1002SJ-8 MT4C1024 511000 18pin
Contextual Info: - 206 IM CMOS x i m ft t t ft CC D y n a m i c -, + > y w R A M 1 0 4 8 5 7 6 X 1 ) 1 8 P I N tt X fi TRWC min (ns) V D D or V C C (ns) TDH min (ns) TRAC max (ns) TRCY min (ns) TCAU min (ns) TAH min (ns) TP mi ) (ns) TWCY (VS IDD max (ibA) I DD STANDBY ( I SB/ I SB2)

VOICE RECORDER IC

Abstract: 761A3 voice activated recorder circuit voice recorder circuit VOICE RECORDER circuits MSM6788 MSM6789A MSM6789L
Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C G EN ER A L DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

EZ31

Abstract: MSM51256 MSC2321A8A-YS18
Contextual Info: 4bE D O K I • b ? 2 4 2 H G □ D Q cì?DS ibb « O K I J O K I S E M I C O N D U C T O R GROUP s e m ic o n d u c to r M S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random

MSC2312A80YS9

Abstract: MSC2312A-XX
Contextual Info: > O K I 4 bE D • b724S4D □DDe1b7S BTT « O K U sem icon d u ctor MSC2312A-XXYS9/KS9 T - V<T- 23 1,048,576 BY 9 BIT DYNAMIC RAM MODULE O K I SEMICONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2312A-XX YS9/KS9 is a fully decoded, 1,048,576 words x 9 bit CMOS dynamic random