MSM411 Search Results

ophn

Abstract: MSM411000-12RS dynamic ram binary cell 411000 CRS15
Contextual Info: D Ë J b7SMSM0 OQDHS?^ 0 f O K I S E M I C O N D U C T O R G R O U P ÛT . . 6 7 2 4 2 4 Q O K I SEMICONDUCTOR. GROUP — _ _ 89D 0 2 5 7 9 D O K I semiconductor M S M 4 1 1 P O O R S 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM411000RS is a new generation dynamic RAM organized as 1,048,576 words by 1 bit.

TIC42

Abstract: 40P0K M5M411664AJ M4116 m5m411664
Contextual Info: MITSUBISHI LSIs M 5 M 4 1 1 6 6 4 A J ,T P 1 -5 ,-6 ,-7 ,-5 S ,-6 S ,-7 S FAST PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for

MSM411001-10RS

Abstract: MSM411001-12RS
Contextual Info: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >

M5M411665

Abstract: M5M4116 M5M411665AJ
Contextual Info: MITSUBISHI LSIs M5M411665AJ,TP2-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 65536-word by 16-bit dynam ic RAMs, fabricated with a high perform ance CMOS process, and is ideal for

M5M4116

Abstract: M5M411665AJ M5M411665 65536word
Contextual Info: MITSUBISHI LSIs M 5 M 4 1 1 6 6 5 A J , T P 2 , T P 3 - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for

6724

Abstract: B754 87424
Contextual Info: O K I SEMI CONDUCTOR GROUP ö l D E § t>7242MD ; ,6 7 2 4 2 4 0 O K I SEMICONDUCTOR GROUP . 89D 0 2 7 3 4 D 7 L ¥ £ '2 3 '/7 l l l k l s e m i c o n d u MSC2310YS9/KS9 c t o 0DDB73M r _ _ 1,048,576 BY 9 BIT DYNAMIC RAM MODULE

Contextual Info: MITSUBISHI LSIs M 5 M 4 1 1 6 6 5 A J , T P 2 , T P 3 - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for

M5M411665AJ

Abstract: m5m411665atp3 M5M411664AJ m5M418128 M5M411664AJ7 M5M4116
Contextual Info: MEMORIES BUFFER M E M O R IE S • 1M BUFFER MEMORIES Memory capacity . Mwinory ■ Configuration Function mod« Mçx. Typ. accsss power time dwsipation mW <*} Fast Page 1CAS/2W 50 625 60 550 70 475 50 Fast Page 1CAS/2W 60 Self-Refresh mode Low Power