MSM27C2 Search Results

eprom 27c256

Abstract: 27C256 atmel 27C256 hitachi 27C256 27c256 intel WSI Cross Reference 27c256 toshiba ti 27c256 hitachi 27c256 oki cross
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27H256 WS57C128FB WS57C256F WS57C256F MSM27C256 WS57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI AT27HC256/L AT27HC256R/R WS57C256F WS57C256F SGS-T WSI M27128/A M27256 WS57C128FB WS57C256F CATALYST WSI

DD13337

Contextual Info: 5ÖE D • b 7 5 4 2 4 0 G G 1 3 3 3 b BbO « O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM27C256HZB -r-^/s-as" 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.

Contextual Info: O K I Semiconductor MSM27C201ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C201ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 w ord x 8 bits. The MSM27C201ZB operates on a single 5 V pow er supply and is TTL compatible. Since the

27C256H-55

Abstract: 27C256H-70 MAX184 MAX525 MSM27C256 MSM27C256H MSM27C256H-55 MSM27C256H-70
Contextual Info: O K I semiconductor MSM27C256H 32,768-Word x 8-Bit UV EPROM G E N E R A L D ESC R IPTIO N The M S M 27C 256H is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. T he M S M 27C 256H is m anufactured by the CM O S double silicon gate

Contextual Info: O K I Semiconductor MSM27C201ZB 2 62,144-W ord x 8-B it O ne Tim e PROM DESCRIPTION The M SM 27C201ZB is a 2 Mb electrically Program mable Read-Only M em ory organized as 262,144 word x 8 bits. The M SM 27C201ZB operates on a single 5 V pow er supply and is TTL com patible. Since the

Contextual Info: O K I semiconductor MSM27C256H 32,768-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The MSM27C256H is a 32,768-word x 8-bit ultraviolet erasable and electrically programmable read-only memory. The MSM27C256H is manufactured by the CMOS double silicon gate technology and is contained in the 28-pin package.

27C256 wsi

Abstract: WSI Cross Reference TMM27128
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27C64 Am27H256 WS57C128FB WS57C256F WS57C64F WS57C256F MSM27C256 W S57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI SGS-T WSI AT27HC256/L AT27HC256R/R AT27HC64/L AT27HC64R/RL WS57C256F WS57C256F WS57C64F

7a176

Abstract: DIP32-P-600-2
Contextual Info: ¡ 電子デバイス 1A MSM27C201CZ 262,144-Wordx8-Bit One Time PROM n 概要 MSM27C201CZは2Mビットの電気的書込可能なワンタイムPROMです。 メモリ容量は262,144 ワード×8ビットで、5Vの単一電源で使用できます。

MAX100

Abstract: MAX120 MAX150 MAX28 MAX550 MSM27C2048-10 MSM27C2048-12 MSM27C2048-15
Contextual Info: OKI semiconductor MSM27C2048 131072 x 16 BIT UV ERASABLE ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY GENERAL DESCRIPTION The MSM27C2048 is a 131072 words x 16 bit ultraviolet erasable and electrically programmable read-only memory. The MSM27C2048 is manufactured by CMOS double

MAX184

Abstract: MAX525 MSM27C256HZB
Contextual Info: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.

Contextual Info: O K I Semiconductor MSM27C231ZB_ 262,144-W ord x 8-B it L o w -V oltage O n e T im e PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Program mable Read-Only Memory organized as 262,144 words x 8 bits. The M SM 27C231ZB operates on a single 3.3 V power supply and is TTL com patible. Since the

NZ14

Abstract: MSM27C231ZB
Contextual Info: O K I Semiconductor MSM27C231ZB 262,144-Word x 8-Bit Low-Voltage One Time PROM d e s c r ip t io n T aIly Pr°S “ able Read' ° nly Memory organized as 262,144 words * T 3 Smgle 3 3 V P °Wer “ PP1? and is TTL compatible. Since the o S e T “ 1 d ° CkS 316 ^

MSM27C201CZ

Contextual Info: ¡ Semiconductor 1A MSM27C201CZ 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C201CZ is a 2Mbit electrically Programmable Read-Only Memory organized as 262,144 word x 8bit. The MSM27C201CZ operates on a single +5V power supply and is TTL compatible.

MSM27C221ZB

Contextual Info: O K I Semiconductor M S M 2 7C 2 2 1ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C221ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C221ZB operates on a single 5 V power supply and is TTL compatible. Since the

oki m27256

Abstract: 27C256 TMS27C128
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27C64 Am27H256 WS57C128FB WS57C256F WS57C64F WS57C256F MSM27C256 WS57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI SGS-T WSI AT27HC256/L AT27HC256R/R AT27HC64/L AT27HC64R/RL WS57C256F WS57C256F WS57C64F

Contextual Info: O K I semiconductor MSM27C2000ZB 262,144-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27C 1000ZB is a 262,144-w ord x 8-bit electrically program m able read-only memory. The M S M 27C 1000ZB is m anufactured by C M O S double silicon gate technology and is

Contextual Info: O K I Semiconductor MSM27C221ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C221ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C221ZB operates on a single 5 V power supply and is TTL compatible. Since the

12.75V PGM

Abstract: 27C2000-15 j727 27c2000-12 MAX275 MAX28 MSM27C2000-12 MSM27C2000-15 27c2000
Contextual Info: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 27C 2000 is m anufactured by CM O S double silicon gate technology

27C TVS

Abstract: AX28 27c2000
Contextual Info: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M SM 27C 2000 is m anufactured by CM O S double silicon gate technology

Contextual Info: O K I Semiconductor MSM27C221ZB 262,144-Word x 8-Bit One Time PROM D ESCRIPTIO N l 8 \k s T h T M S M 2 7 C 2 2 1 Z B T ProSra mable Read-Only Memory organized as 262,144 w ords T MSM27C221ZB rmprat * ^ P° WCr and is TTL com patible. Since the easy-to-useT h e

umt block diagram

Contextual Info: O K I Semiconductor MSM27C201ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION I T h e CM0SM27C2m 7H elfiCtliCally Progra^ mable Read-Only Memory organized as 262,144 word MSM27C201ZB ooeraipc! ^ The Lrm ir° 1 TK ^ T , * 18 7 * Smg 5 V P° W6r SUpply 3nd is TTL com PatiWe. Since the

Contextual Info: O K I semiconductor MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27C 256H ZB is a 32,768-w ord x 8-bit electrically program m able read-only memory. The M S M 27C 256H ZB is m anufactured by the CM O S double silicon gate technology and is

Contextual Info: O K I Semiconductor MSM27C231ZB_ 262,144-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C231ZB operates on a single 3.3 V power supply and is TTL compatible. Since the

max184

Contextual Info: O K I semiconductor MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory. The MSM27C256HZB is manufactured by the CMOS double silicon gate technology and is