DIP32P6002 Search Results

Contextual Info: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TO SHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM

TC518129CFWL-80

Abstract: 2SA1015
Contextual Info: TOSHIBA TC518129CPL/CFWL/CFTL-70V,-80V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129CPIVCFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory PSRAM

TC551001

Contextual Info: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TO SHIBA TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048,576-bit static random access memory SRAM organized as 131,072 words bv 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

DIP32

Abstract: MR27V801D MR27V801DMA MR27V801DRA MR27V801DTA
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MR27V401E

Abstract: MR27V401EMA MR27V401ERA MR27V401ETA
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

a6628

Abstract: A-6628 cewe DIP32 MSM548512L
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

DIP32

Abstract: MR27V801D
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

DIP32

Abstract: MSM52V1001LL LTA070
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MR27V801D

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

TC551001

Abstract: TSOP 50 PIN TOSHIBA TSOP- 50 PIN TOSHIBA
Contextual Info: TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM

MSM52V1001LP

Abstract: TSOPI32-P-820-0
Contextual Info: E2I0016-17-Y1 ¡ Semiconductor MSM52V1001LP ¡ Semiconductor This version: Jan. 1998 MSM52V1001LP Previous version: Aug. 1996 131,072-Word ¥ 8-Bit CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power

MSM538031E

Abstract: 32PIN 32-PIN MSM538001E-XXGS-K MSM538001E-XXRS MSM538001E-XXTS-K
Contextual Info: Semiconductor MSM538031E 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538031E is a high-speed silicon gate CMOS Mask ROM with 1,048,576word x 8-bit capacity. The MSM538031E operates on a single 3.0V or 3.3V power supply but offers the same fast accress times as products that operate at 5.0V. The MSM538031E's

DIP32-P-600-2

Contextual Info: ¡ 電子デバイス 1A MR27V801D 1,048,576-Wordx8-Bit Production Programmed Read Only Memory P2ROM n 概要 MR27V801Dは8Mビットの書き込み済みの読み出し専用メモリ(P2ROM)です。 メモリ容量は 1,048,576ワード×8ビットで、3V~3.3Vの単一電源で使用できます。

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

Contextual Info: O K I Semiconductor MSM27C401CZ 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C401CZ is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MSM27C401CZ operates on a single +3V-5V power supply and is TTL compatible.

DIP32

Abstract: MSM52V1001L
Contextual Info: J2I0015-17-Y1 作成：1998年 1月 MSM52V1001L l 前回作成：1996年 8月 ¡ 電子デバイス MSM52V1001L 131,072-Wordx8-Bit CMOS STATIC RAM n 概要 ~

MSM548512L

Abstract: MSM548512L-10GS-K MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS
Contextual Info: E2L0044-17-Y1 ¡ Semiconductor MSM548512L ¡ Semiconductor This version: Jan. 1998 MSM548512L Previous version: Dec. 1996 524,288-Word ¥ 8-Bit High-Speed PSRAM DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,

MR27V801D

Abstract: MR27V801DMA MR27V801DRA MR27V801DTA
Contextual Info: ¡ Semiconductor 1A MR27V801D 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.

DIP36-P-600-2

Abstract: MR27V801D
Contextual Info: O K I Semiconductor MR27V801D Preliminary 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8M bit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.

Contextual Info: ¡ Semiconductor MR27V801D 1A Preliminary 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.

toshiba tc551001BPL

Abstract: TC551001 tc551001bpl
Contextual Info: T O S H IB A TC551001 BPI_/BFI_/BFTL/BTRI_/BSTL/BSRL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM

551001CP

Contextual Info: TOSHIBA TC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CP/CF/CFT/CTR/CST/CSR is a 1,048,576-bit static random access memory SRAM organized