MSM27 Search Results

MSM27V1655CZ

Contextual Info: ¡ Semiconductor 1A MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM DESCRIPTION The MSM27V1655CZ is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its

DIP42-P-600-2

Abstract: MSM27C1602CZ
Contextual Info: O K I Semiconductor MSM27C1602CZ 1,048,576-W ord x 16-Bit or 2,097,152-W ord x 8-Bit One Time PROM D ES C R IP TIO N T h e M S M 2 7 C 1 6 0 2 C Z is a 1 6 M b it e le c tric a lly P ro g ra m m a b le R e a d -O n ly M e m o ry w h o s e c o n fig u ra tio n can be e le c tric a lly sw itch e d be tw ee n 1,0 48,57 6 w o rd x 16bit and 2 ,0 9 7 ,1 5 2 w o rd x 8

SOP40 prom

Abstract: 4mbit prom MSM27C402CZ
Contextual Info: O K I Semiconductor MSM27C402CZ 262,144-W ord x 16-Bit or 524,288-W ord x 8-Bit One Time PROM DES C R IP TIO N T he M S M 2 7 C 4 0 2 C Z is a 4 M b it e le c tric a lly P ro g ra m m a b le R e ad -O n ly M em o ry w h o se con figu ration can be e le ctrica lly sw itch ed betw een 26 2 ,1 4 4 w o rd x 16bit and 52 4 ,2 8 8 w o rd x 8bit. T he M S M 27C 40

Contextual Info: O K I Semiconductor MSM27C401AZB 524,288-Word x 8-Bit One Time PROM DESCRIPTION word^x^bü^Th^MSM27C401^A7RCtriCa^l^ Pr0Srami" able Read-Only Memory organized as 524,288 the B ? PerateS,°n 3 Slngle 5 V P °wer suPP]y ^ d is TTL compatible. Since a synchronously, external clocks are not required, making the MSM27-

ANAa

Abstract: DIP40
Contextual Info: O K I Semiconductor MSM27C432ZB 262,144-Word x 16-Bit or 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C432ZB is a 4 Mb electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 words x 16 bits and 524,288 words x 8 bits. The MSM27C432ZB

MSM27C402CZ

Contextual Info: ¡ Semiconductor 1A MSM27C402CZ 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C402CZ is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MSM27C40

eprom 27c256

Abstract: 27C256 atmel 27C256 hitachi 27C256 27c256 intel WSI Cross Reference 27c256 toshiba ti 27c256 hitachi 27c256 oki cross
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27H256 WS57C128FB WS57C256F WS57C256F MSM27C256 WS57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI AT27HC256/L AT27HC256R/R WS57C256F WS57C256F SGS-T WSI M27128/A M27256 WS57C128FB WS57C256F CATALYST WSI

DD13337

Contextual Info: 5ÖE D • b 7 5 4 2 4 0 G G 1 3 3 3 b BbO « O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM27C256HZB -r-^/s-as" 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.

intel 2758 eprom

Abstract: MSM2758 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE 1024-words msm2128 2758 eprom
Contextual Info: MARCH 1980 | 003831 semiconductor t -3 J 3 I MSM2758 8,192-BIT 1024 X 8 UV ERASABLE PROM GENERAL DESCRIPTION FEATURES The Oki MSM2758 is a 8192-bit ultraviolet erasable and electrical program m able read-only m emory organized as 1024w ords by 8-bits using O ki's Floating Gate N-channe7 Silicon Gate

MSM2750-1A

Abstract: MSM2750-2A MSM2750AS
Contextual Info: OKI semiconductor MSM2750AS 2048-BIT UV ERASABLE ELECTRICALLY-PROGRAMMABLE READ-ONLY MEMORY _ GENERAL DESCRIPTION MSM 2750 is a Programmable Read-Only Memory PROM o f P-channel structure capable o f electric w rite from outside and rew rite a fte r erasion by ultraviolet rays.

Contextual Info: O K I Semiconductor MSM27C401AZB 524,288-Word x 8-Bit O ne Tim e PROM DESCRIPTION The MSM27C401AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524,288 words x 8 bits. The MSM27C401AZB operates on a single 5 V power supply and is TTL compatible. Since

Contextual Info: O K I semiconductor MSM27512ZB 65,536-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION T he M S M 27512Z B is a 65,536-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27512Z B is m anufactured by the N channel double silicon gate M OS technology and is

Contextual Info: O K I semiconductor MSM27256ZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27256ZB is a 32,768-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27256Z B is m anufactured by the N channel double silicon gate M O S technology and is

Contextual Info: O K I Semiconductor MSM27C201ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C201ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 w ord x 8 bits. The MSM27C201ZB operates on a single 5 V pow er supply and is TTL compatible. Since the

Contextual Info: O K I semiconductor MSM27128AZB 16,384-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27128AZB is a 16,384-word x 8-bit electrically programmable read-only memory. The MSM27128AZB is manufactured by the N channel double silicon gate MOS technology and is

Contextual Info: O K I Semiconductor MSM27C3202CZ 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM DESCRIPTION The M S M 27C 3202C Z is a 32M bit e le ctrica lly P rogram m able R ead-O nly M em ory w hose configuration can be electrically switched between 2,097,152 word x 16bit and 4,194,304 word x 8

27C256H-55

Abstract: 27C256H-70 MAX184 MAX525 MSM27C256 MSM27C256H MSM27C256H-55 MSM27C256H-70
Contextual Info: O K I semiconductor MSM27C256H 32,768-Word x 8-Bit UV EPROM G E N E R A L D ESC R IPTIO N The M S M 27C 256H is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. T he M S M 27C 256H is m anufactured by the CM O S double silicon gate

Contextual Info: O K I Semiconductor MSM27C121ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION The M SM 27C121ZB is a 1 Mb electrically Program mable Read-Only Mem ory organized as 131,072 words x 8 bits. The M SM 27C121ZB operates on a single 5 V pow er supply and is TTL com patible. Since the

Contextual Info: O K I Semiconductor MSM27C201ZB 2 62,144-W ord x 8-B it O ne Tim e PROM DESCRIPTION The M SM 27C201ZB is a 2 Mb electrically Program mable Read-Only M em ory organized as 262,144 word x 8 bits. The M SM 27C201ZB operates on a single 5 V pow er supply and is TTL com patible. Since the

27c802

Contextual Info: O K I Semiconductor MSM27C802ZB 524,288-W ord x 16-B it o r 1,048,576-W ord x 8-B it O ne T im e PROM DESCRIPTION The M SM 27C802ZB is an 8 Mb electrically Program mable Read-Only Memory whose configuration can be electrically switched between 524,288 words x 16 bits and 1,048,576 words x 8 bits. The M SM 27C802ZB

Contextual Info: O K I semiconductor MSM27C256H 32,768-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The MSM27C256H is a 32,768-word x 8-bit ultraviolet erasable and electrically programmable read-only memory. The MSM27C256H is manufactured by the CMOS double silicon gate technology and is contained in the 28-pin package.

M271000

Contextual Info: O K I semiconductor MSM271000 131,072-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 271000 is a 131,072-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 271000 is m anufactured by the N channel double silicon gate M OS

MSM2764AZB

Abstract: 2764AZB M2764AZB
Contextual Info: O K I semiconductor MSM2764AZB 8,192-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M SM 2764AZB is an 8,192-w ord x 8-bit electrically program m able read-only m em ory. The M S M 2764A ZB is m anufactured by the N channel double silicon gate M OS technology and is

203d6

Abstract: 27C431
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The M SM 27C431A ZB is a 4 M b electrically Program m able Read-O nly M em ory organized as 524,288 words x 8 bits. The MSM 27C431AZB operates on a single 3.3 V pow er supply and is TTL compatible. Since