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    Essentra Components

    Essentra Components 011024WF150B

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    Essentra Components 011024WF018B

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    Essentra Components 011024WF125B

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    Essentra Components 011024WF025B

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    Essentra Components 011024WF062B

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    1024W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SLAA012

    Abstract: Data-Sheet TLC2543
    Contextual Info: TLC2543C, TLC2543I, TLC2543M 12-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS079E – DECEMBER 1993 – REVISED JUNE 2000 D D D D D DB, DW, J, OR N PACKAGE TOP VIEW AIN0 AIN1 AIN2 AIN3 AIN4 AIN5 AIN6 AIN7 AIN8 GND 1 20 2


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    TLC2543C, TLC2543I, TLC2543M 12-BIT SLAS079E 12-Bit-Resolution TLC2543MJB 59629688601QRA TLC2543EVM TLC2543 SLAA012 Data-Sheet TLC2543 PDF

    Contextual Info: TLV2543C, TLV2543I 12-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS096C – MARCH 1995 – REVISED JUNE 2000 D D D D D D D D D D D D D 12-Bit-Resolution A/D Converter 10-µs Conversion Time Over Operating Temperature Range


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    TLV2543C, TLV2543I 12-BIT SLAS096C 12-Bit-Resolution PDF

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash PDF

    IBM "embedded dram"

    Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
    Contextual Info: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of


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    conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys PDF

    MSM6389C

    Abstract: SAS controller chip MSM6389CJS
    Contextual Info: E2D0033-39-21 ¡ Semiconductor MSM6389C ¡ Semiconductor This version: MSM6389C Feb. 1999 Previous version: May. 1997 1,048,576-Word x 1-Bit Solid-State Recorder Data Register GENERAL DESCRIPTION The MSM6389C is a solid-state recorder data register in 1,048,576 words x 1 bit configuration.


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    E2D0033-39-21 MSM6389C 576-Word MSM6389C SAS controller chip MSM6389CJS PDF

    MSM6596A

    Abstract: MSM6388 MSM6389 MSM6588 SSOP30-P-56-0
    Contextual Info: E2D0039-39-21 This version: Feb. 1999 MSM6596A-xxx Previous version: May. 1997 ¡ Semiconductor MSM6596A-xxx ¡ Semiconductor 2-Mbit Serial Voice ROM GENERAL DESCRIPTION The MSM6596A is the shorter-TAT processing version of the MSM6596. The MSM6596A is a serial voice ROM with a 1,048,576-word ¥ 1-bit ¥ 2-bank configuration.


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    E2D0039-39-21 MSM6596A-xxx MSM6596A MSM6596. 576-word MSM6388 MSM6389 MSM6588 SSOP30-P-56-0 PDF

    HN58X2508FPIE

    Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
    Contextual Info: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and


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    HN58X2508I HN58X2516I 1024-word 2048-word REJ03C0222-0200 HN58X25xxx 32-byte HN58X2508FPIE HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE PDF

    Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9168 8-bit MCU with 1k program ROM, 64-byte RAM, 1 R2F module and 3 x 13 LCD driver. Data Sheet TD-0410001 Rev. 1.2 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to


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    FS9168 64-byte TD-0410001 CR-004 PDF

    2102 Static RAM

    Abstract: 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 21L02 2102L2 2102LH
    Contextual Info: 2 1 0 2 /2 1 0 2 L /2 1 L 0 2 1024 x 1 Static RAM M O S M em ory P ro d u cts Logic Sym bol D escrip tio n The 2102 fa m ily c o n s is ts of 1024-w ord by 1-bit s ta tic Random A c c e s s re a d /w rite M em o rie s RAM th a t req u ire a single 5 V supply, have fully T T L -com p a tib le


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    2102/2102L/21L02 1024-word 2102L) 21L02) 2102L 21L02 16-pin 2102/2102L/21L02 2102 Static RAM 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 2102L2 2102LH PDF

    HN25088L

    Abstract: HN25089L Hitachi Scans-001
    Contextual Info: H N 2 5 8 8 L , H N 2 5 Ö 9 L 1024-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 2 5 0 8 8 L and H N 2 5 0 8 9 L are lo w po w e r and high speed e le c tric a lly program m able, fu lly decoded T T L B ip o la r 8192 b it read o n ly m em ories organized as 1024 w ord s b y 8 bits w ith onc h ip address decoding and fo u r c h ip enable inputs.


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    HN25088L, HN25089L 1024-word HN25088L HN25089L 100ns 350mW 70max Hitachi Scans-001 PDF

    high level block diagram for asynchronous FIFO

    Abstract: DIP28-W-300 LH540202 LJH540202
    Contextual Info: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech­ nology, capable of storing up to 1024 nine-bit words. It


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    LH540202 LH5497 ArrVIDT/MS7202 LH5497H 28-Pin, 300-mil 32-Pin 32PLCC high level block diagram for asynchronous FIFO DIP28-W-300 LH540202 LJH540202 PDF

    TMS320C6713pyp

    Abstract: SPRS186 TMS320C6713 ccfg C6713 SPRU190 TMS320C6000 TMS320C6713 TMS320C6713B TMS320c6713 hpi mcbsp
    Contextual Info: TMS320C6713, TMS320C6713B Digital Signal Processors Silicon Errata C6713 Silicon Revision 1.1 C6713B Silicon Revision 2.0 SPRZ191G December 2002 Revised May 2004 Copyright  2004, Texas Instruments Incorporated TMS320C6713, TMS320C6713B Silicon Errata SPRZ191G


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    TMS320C6713, TMS320C6713B C6713 C6713B SPRZ191G TMS320C6713B TMS320C6713pyp SPRS186 TMS320C6713 ccfg SPRU190 TMS320C6000 TMS320C6713 TMS320c6713 hpi mcbsp PDF

    Contextual Info: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum


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    57C4502-50/65/80 1024x9 57C4502 PDF

    Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)


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    Am27S35/Am27S37 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37 PDF

    Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEN TS D Ë | 44=11,203 0010=135 b | ~ 92D H M I 0 0 4 7 4 , H M 1 4 7 4 F 10932 -^ T -4 6 -2 3 -0 8 1 0 2 4 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The H M 100474 is a 1024-words x 4-bit, read/write, random access


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    1024-words PDF

    Contextual Info: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host


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    BU-61590 MIL-STD-1553A/B BU-61590 BU61590 78-pin 1553B, A3818, A5232, A5690 15/-15v PDF

    HD63183

    Contextual Info: Under Development H D63185- D ocum ent Im age Com pression and Expansion Processor Enhanced DICEP-E DICEP-E is an LSI th a t perform s com pression (encoding) and expansion (decoding) of 2value d a ta used to rep resen t a docum ent image. It is positioned a t th e high en d of th e


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    D63185--------- HD63085) HD63183) HD63183 PDF

    RAM 2102

    Abstract: 2102 Static RAM 2102 ram 2102 2102-2 RAM 2102L 2102F 2102H 2102L1 2102L2
    Contextual Info: Extended Temperature Range Supplement 2 1 0 2 /2 1 02L 1024 x 1 Static RAM M OS M em ory P ro d u cts D escrip tio n T he 2 1 0 2 fam ily c o n s is ts o f 1024-w ord by 1-bit s ta tic Random A c c e s s re a d /w rite M em o rie s RAM th a t req u ire a single 5 V supply, h a ve fu liy T T L -co m p a tib le


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    2102/2102L 1024-word 2102L 16-pin 2102L) 2102H 2102LH 2102F 2102LF 2102L1 RAM 2102 2102 Static RAM 2102 ram 2102 2102-2 RAM 2102L2 PDF

    HM 1211

    Abstract: HM2110 HM2110-1 Jj-80
    Contextual Info: H M 2 1 1 0 , H M 2 1 1 0 -1 1 0 2 4 - w o rd x 1 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o ry The H M 21 10 Series item is an ECL compatible, 1024-word x 1-bit, read/write, random access memory developed for application to scratch pads, control and buffer memories, etc. which require high


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    HM2110, 1024-word HM2110 HM2110: HM2110-1: jj-80% HM2110-1 HM2110 HM 1211 HM2110-1 Jj-80 PDF

    HE8P1603P

    Abstract: HE8P1603S P12W hxosc
    Contextual Info: HE8P1603 HE8P1603 PRODUCT SPECIFICATION 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    HE8P1603 HE8P1603 HE8P1603P HE8P1603S P12W hxosc PDF

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash PDF

    S590

    Abstract: S-29530A S-29590A S-29590ADPA S-29630A S-29690A S-29690ADPA S-29X90A S690
    Contextual Info: Contents Features. 1 Pin Assignment . 1 Pin Functions . 1 Block Diagram. 2


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    PDF

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand PDF

    SPH-002T-P0.5S

    Abstract: motorolla processor DSP56000 DSP56300 DSP56307 DSP56L307
    Contextual Info: Order Number EB361/D: Rev. 1, 3/2001 MOTOROLA Semiconductor Products Sector Engineering Bulletin Functional Differences Between the Motorola DSP56307 and DSP56L307 The DSP56307 and DSP56L307, two members of the Motorola DSP56300 family of programmable digital signal processors


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    EB361/D: DSP56307 DSP56L307 DSP56L307, DSP56300 DSP56000 EB361/D SPH-002T-P0.5S motorolla processor DSP56L307 PDF