MSC81111 Search Results

MSC81111

Abstract: S010
Contextual Info: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010

MSC81111

Abstract: 8 pin ic 293 Transistor B C 458
Contextual Info: MSC81111 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC81111 is Designed for Class "C" Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 600 mA VCB 35 V PDISS 21.8 W @ TC = 25 C TJ -65 C to +200 C

MSC81111

Abstract: S010 v5052
Contextual Info: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010

MSC81111

Abstract: S010 C127318A
Contextual Info: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

MSC81002

Abstract: common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118
Contextual Info: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

MSC81111

Abstract: MSC83301 SOLO 15 MSC81002 MSC81005 MSC81010 MSC81020 MSC81058 MSC81118 MSC81402
Contextual Info: SILICON POWER TRANSIS TORS MICROWAVE TFtANSiSK This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

Contextual Info: / = 7 SGS-THOMSON ^ 7 /. M » l [ L I C T [ R i M [ ] @ g _ M S C 8 1 1 1 1 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED . REFRACTORY/GOLD METALLIZATION . VSWR CAPABILITY o o :1 @ RATED CONDITIONS

Contextual Info: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

Contextual Info: SGS-THOMSON :IL[i g?GMD § M S C 8 1 111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EM ITTER BALLASTED ■ R E FR AC TO R Y /G O LD M ETALLIZATION ■ VSW R C APABILITY oo:1 @ RATED C O N D ITIO N S ■ HERM ETIC STRIPAC PACKAGE