MSC81005 Search Results

MSC81005

Contextual Info: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016

MSC81005

Contextual Info: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016

Contextual Info: SGS-1H0MS0N iBJiCTMD $ 7 . MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . REFRACTORY/GOLD METALLIZATION . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC® PACKAGE • P o u t = 5.0 W MIN. WITH 10 dB GAIN

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MSC81002

Abstract: common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118
Contextual Info: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

MSC81111

Abstract: MSC83301 SOLO 15 MSC81002 MSC81005 MSC81010 MSC81020 MSC81058 MSC81118 MSC81402
Contextual Info: SILICON POWER TRANSIS TORS MICROWAVE TFtANSiSK This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

Contextual Info: S G S -T H O M S O N :IL[i g?GMD § M S C 8 1 0 05 RF & MICROWAVE TRANSISTO RS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ REFRACTORY/GOLD METALLIZATION ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE - P out = 5.0 W MIN. WITH 10 dB GAIN

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520

Contextual Info: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition