MRT PACKAGE Search Results

2SB1328

Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.

2SB1333

Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.

2SB1482

Abstract: 2SC4722 2sa1820 2SD2172
Contextual Info: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.

2sd2009

Abstract: 2sd transistors equivalent HA2000 HA-2000
Contextual Info: 2SD2009 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain, typically hFE = 15000 at V qe = 3 V, Iq = 500 mA • high input impedance 2SD2009 (MRT) 6.5 ± 0.2 r

2SB1329

Abstract: 2SD2005
Contextual Info: 2SB1329 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high power, Pc = 1.2 W • low collector saturation voltage, typically VCE(sat) = -0.2 V at Iq/I b = -500 mA/-50 mA • complementary pair with 2SD2005 2SB1329 (MRT)

2SD2004

Abstract: transistor 2SD2004 T1052 2SB1328
Contextual Info: 2SD2004 Transistor, NPN Features Dimensions Units : mm available in MRT package 2SD2004 (MRT) high breakdown voltage, typically BVC E0= 160 V 6 5 ± 0.2 r~ high transition frequency and small output capacitance wide safe operating area (SOA) complementary pair with 2SB1328

2SB1330

Abstract: 2SD2006 2sb transistor mrt package transistor 2SB
Contextual Info: 2SB1330 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high breakdown voltage and current capacity VCE0 = -80 V, lc = -0.7 A • complementary pair with 2SD2006 2SB1330 (MRT) 6.5 ± 0.2 Applications • 3.4 ±0.2 1.0 medium power amplifier and

transistor CR NPN

Abstract: 2SD2146 2SB1517
Contextual Info: 2SD2146 Transistor, NPN Features Dimensions U n its : mm • available in MRT package • • low collector saturation voltage, typically VEC(sat) = 0.5 V at lc/lB = 2 A/O.z A wide safe operating area (SOA) • complementary pair with 2SB1517 2SD2146 (MRT)

2sd2006

Abstract: TRANSISTOR "BC 371" TRANSISTOR BC 373 transistor 2SD2006 2SB1330 transistor BC SERIES Q 371 Transistor
Contextual Info: 2SD2006 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high breakdown voltage: BVq ^ q = 80 V 2SD2006 (MRT) 6 5±0 2 • large current capacity, lc = 700 mA • complementary pair with 2SB1330 1.0 Applications • R medium power amplifier

B1329

Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934
Contextual Info: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )

txc 24.5

Abstract: E2 hdb3 TXC-21055 1N4148 1N914 AN-517 PE-65966 TXC-02050C ME502B A2917
Contextual Info: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,

TXC-21055

Abstract: E2 hdb3 1N4148 1N914 IN4148 IN914 TXC-02050 nom401
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

TXC-21055

Abstract: 1N4148 1N914 IN4148 IN914 TXC-02050 8448-kbit txc 24.5 G753
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

g745

Contextual Info: BACK MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

computer schematic power supply circuit diagram

Abstract: txc-21037 computer networking diagram txc-03701 schematic diagram OF LED COMPUTER monitor TXC-02050 e2 e3 evaluation computer power supply diagram
Contextual Info: E2/E3F-MRT Evaluation Board E2/E3 Framer and Line Interface TXC-21037 PRODUCT INFORMATION FEATURES DESCRIPTION • Complete single-board test system for evaluating TranSwitch E2/E3F and MRT VLSI devices at 8 or 34 Mbit/s: - E2/E3F: 8-, 34-Mbit/s Framer Device

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

2sa1820

Abstract: 2SA1903 2SB1425 2SC4721 2SC4720 2sa190 2SA934 2SA1818 2SA1902 2SA935
Contextual Info: T ranslstors TO -92L • TO-92LS * MRT TO-92L is a high power version o l TO-92 and T0-92LS is a sfcnmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automate placemen« machine. : iiUNtt I»0*pW« IWNffl •Product Designation

2SC4722

Abstract: 2SD2451 2sc4719 2SB1482 2SA1820
Contextual Info: T ransistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO -92L MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 ‘ C) Package Application

Contextual Info: MRT Device X co u w 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION ' = = The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the func­ tions needed for terminating two CCITT line rates, 8448

Contextual Info: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,

2sd2011

Abstract: 2SB1333 transistor 2SD 2sd darlington
Contextual Info: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333

2SD2010

Contextual Info: 2SD2010 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • built-in 60 V Zener diode between collector and base • resistant to surges • damper diode incorporated j_o • built-in resistors between base and emitter

Contextual Info: Toggles Series MR Miniature Power Level Rotaries Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons For MRX: For MRY: Programmable Illuminated PB For MRT: Other Ratings Contact Resistance: Insulation Resistance: Keylocks Dielectric Strength:

2SB1333

Contextual Info: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011