MRF640 Search Results

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

motorola rf Power Transistor

Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

552 transistor motorola

Abstract: MRF6403 1403 Motorola zd 409
Contextual Info: Order this data sheet by MRF6403/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6403 NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold

motorola rf device

Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

MRF6402

Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

MRF6401

Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly

RF NPN POWER TRANSISTOR C 10-50 GHZ

Abstract: 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

DIODE SMD 012 MOTOROLA

Abstract: PL 431 transistor
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 13/11/99 The RF Line MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

smd transistor bcv62

Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
Contextual Info: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A

diode 1N4148 SMD PACKAGE DIMENSION

Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

MRF6401 PHOTOMASTER

Abstract: 305C BCV62 MRF6401 TL11 100 pf, ATC Chip Capacitor motorola base station 1995
Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically

RF640

Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz

transistor bd135

Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

37281

Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

DL110

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

DB 22 AR transistor smd

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and

motorola rf Power Transistor Data Book

Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to

Motorola Power Transistor Data Book

Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high

305C

Abstract: BCV62 MRF6401 TL11 motorola Base Station motorola rf Power Transistor smd potentiometer
Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and