MRF21010 R1 Search Results

capacitor 0805 avx

Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

capacitor 2200 micro M

Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.

C-XM-99-001-01

Abstract: pep cxm MRF21010
Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

motorola sps transistor

Abstract: MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet

MRF21010

Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

MRF21010R1

Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

capacitor 2200 micro M

Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
Contextual Info: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

MRF21010

Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Contextual Info: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

j438

Abstract: MRF21010
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

atc100B100GT500XT

Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

10ACPR

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: <£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N- Channel Enhancement-Mode Lateral MOSFETs