MRF1 Search Results

Motorola MRF183

Abstract: GS -L Capacitor
Contextual Info: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­

MRF173

Contextual Info: MRF173 RF POWER FET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF173 is Designed for wideband large-signal output and driver stages up to 200 MHz frequency range. PACKAGE STYLE .500 4L FLG B FEATURES: .112 x 45° A S • PG = 11 dB Min. at 150 MHz • 30:1 Load VSWR Capability

Mrf175gu

Abstract: RF Power Field-Effect Transistor,
Contextual Info: MRF175GU RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 OC

sumitomo connectors

Abstract: Coaxial Connectors iec 169-13 sumitomo terminals ug421b IEC-169-1-3 RG22B IEC169-13
Contextual Info: Circular Connectors Connectors compliant to IEC 169-13 1.6/5.6 MRF1.6/5.6 Series Features Rectangular Connectors ● Conforms to IEC169-13 1.6/5.6 requirements. ● Compatible with three types of mating systems screw coupling, push-on, and plug-in . ● Jack can be used for three types of mating system, screw coupling, pushon and plug-in.

A05T

Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

MOTOROLA circuit for mrf150

Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MRF141

Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF1507

Abstract: AN721 zener diode z3 AN211A AN215A MRF1507T1 Nippon capacitors GP 724 DIODE
Contextual Info: MOTOROLA Order this document by MRF1507/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

motorola MOSFET 935

Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF151G

Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
Contextual Info: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MOTOROLA POWER 726 MOS FET TRANSISTOR

Abstract: Amp. mosfet 1000 watt VK20019-4B 108 motorola transistor mosfet 400 mhz MRF160 VK200 24906 MW8005
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc

motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Contextual Info: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

ADC 50 Ghz

Abstract: MRF16030
Contextual Info: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

MRF10500

Abstract: motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC
Contextual Info: MOTOROLA Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.

MRF1004MA

Abstract: TACAN TACAN 41 J295
Contextual Info: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

J120 MOSFET

Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Contextual Info: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF1550

Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

mrf138

Abstract: mrf138 datasheet
Contextual Info: MRF138 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES: A S • PG = 17 dB Typ. at 30 W /30MHz

Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

MRF134-39

Abstract: MRF134 039W
Contextual Info: MRF134-39 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF134-39 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: • PG = 14 dB Typical at 150 MHz • Omnigold Metalization System

MRF156

Abstract: AN-1041 Granberg AN1041 mrf151g 300 mrf155 AN1041/D MRF153 MRF154 MRF141G
Contextual Info: Order this document by AN1041/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1041 MOUNTING PROCEDURES FOR VERY HIGH POWER RF TRANSISTORS Prepared by: Helge O. Granberg RF Engineering Advanced Products Group RF power semiconductors such as MRF153, MRF154, MRF155, MRF156 and MRF430 are housed in Case 368-01,