MPSH24 Search Results

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

MPS-H24

Abstract: MPSH24
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

transistor a110

Abstract: MPSH24 c5470 A110 to92
Contextual Info: MOTOROLA Order this document by MPSH24/D SEMICONDUCTOR TECHNICAL DATA VHF Transistor MPSH24 NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage

Contextual Info: S E M IC D N D U C TO R sw MPSH24 MMB1rH24 '*»• E BE B SOT-23 Mark: 3A NPN RF Transistor T his device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 |^A to 20 m A range to 300 MHz, and low

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: æ Im* n :l I Discrete POWER & Signal Technologies ^1 Ivi Ies QfN P U Q T Q R MPSH24 MMBTH24 M a rk : 3 A NPN RF Transistor This device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 nA to 20 mA range to 300 MHz, and low

KA8402

Abstract: KA8403 KA2981 KA8119 KS5410 Ka2185 KA7007 KA2184 KA2982 ka2913a
Contextual Info: APPLICATION GUIDE 2. VIDEO APPLICATION 2.1 T u n e r fo r T V Xy ANT RF AMP MIXER L/C OSC. VHF KSC1393 KSC2755 UHF KSC2758 KSC1070 KSC1394 KSC2756 KSC3120 MPSH24 MPSH20 MMBTH24 KSC1730 KSC2757 KSC2759 K SC 31 2 1 KSC3867 MPSH10 MPSH1 1 MPS5179 MMBTH10 2 .2 L in e a r IC for B /W T V

MPSH24

Abstract: MMBTH24 MPSH11
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24 I MMBTH24 Discrete POWER & Signal Technologies A National Semiconductor" MPSH24 MMBTH24 Mark: 3A N P N R F T r a n s is to r This device is designed for common-emitter low noise am plifier and mixer applications with collector currents in the 100 nA to 20 mA range to 300 MHz, and low

MMBTH24

Abstract: MPSH11 MPSH24 V30I
Contextual Info: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications

MPSH24

Abstract: MMBTH24 MPSH11
Contextual Info: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications

CBVK741B019

Abstract: F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPSH24 14E D §7*14,41*45 0007337 fl J NPN EPITAXIAL SILICON TRANSISTOR T-31-19 VHF TRANSISTOR ABSOLUTE M AXIM UM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage CoUector-Emitter Voltage Emitter-Base Voltage Collector Current

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPSH19

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) 'cBO ^CE ^CB *CES 1FE 9 <|1A) 0 (V)' (mA) « (V) Max Max Min Max ^ ceo ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) (A) @Tc=25°c

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

J551

Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
Contextual Info: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current

transistor 3005 2

Abstract: SILICON SMALL-SIGNAL DICE MPSH24 MPSH34 MPS-H34 transistor 3005
Contextual Info: MOTOROL A SC -CDIODES/OPTO} f 6367255 MOTOROLA SC 34 Ï F| L3b7255 □□3005 3 3 <D I O D E S / O P T O > 34C 38023 D 7- J /-/7 SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSHC24 DIE NO. — npn LINE SOURCE — DMB203 (I This die provides performance similar to that of the following device types: