MP6X1 Search Results

MP6X11

Contextual Info: Data Sheet Midium Power Transistors 30V / 1A MP6X11  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features Low saturation voltage VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2

MP6X1

Contextual Info: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. (6) (5) (4) (1)

Contextual Info: Midium Power Transistors 50V / 1A MP6X12  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6  Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching (1) Tr.1 (2) Tr.1

MP6X13

Contextual Info: Midium Power Transistors 50V / 3A MP6X13  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) (4) (5) (6) 2) High speed switching

Contextual Info: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. zStructure NPN silicon epitaxial planar transistor

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2SA20

Contextual Info: MP6T3 Transistors Medium Power Transistor −60V, −3A MP6T3 zFeatures 1) High speed switching. (tf : Typ. : 20ns at Ic= −3A) 2) Low saturation voltage, typically (Typ. : −200mV at Ic = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and

2SA1576UB

Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.