MOTOROLA RF POWER TRANSISTORS MTBF Search Results

BD136

Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts

Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts

AN1955

Abstract: MRF5S19090LR3 MRF5S19090LSR3 336 motorola
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090LSR3

AN1955

Abstract: MRF5S19090HR3 MRF5S19090HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090HSR3

AN1955

Abstract: MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3

465B

Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3

vishay mosfet MTBF

Abstract: 465B AN1955 MRF5S21130 MRF5S21130R3 MRF5S21130SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3

AN1955

Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3

MRF5S19130R3

Abstract: MRF5S19130SR3 465B
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S19130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19130SR3

465B

Abstract: AN1955 MRF5S19150 MRF5S19150R3 MRF5S19150SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S19150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150SR3

MRF284

Abstract: CDR33BX104AKWS MRF284LR1 MRF284LSR1
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs

ansi-y14.5m-1994

Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
Contextual Info: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

451a0

Abstract: motorola rf power transistors mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.

Contextual Info: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applications with frequencies from 2110

motorola rf power transistors mtbf

Abstract: mrf5s21090 RM73B2B
Contextual Info: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 Designed for W- CDMA base station applications with frequencies from 2110

vishay mosfet MTBF

Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3 Designed for W - CDMA base station applications at frequencies from 2110

CDR33BX104AKWS

Abstract: MRF5S19100LR3 MRF5S19100LSR3
Contextual Info: MOTOROLA Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100LR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to

Contextual Info: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090LSR3 Designed for PCN and PCS base station applications with frequencies up to

ferroxcube for ferrite beads

Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: MOTOROLA Order this document by MRF5S19130/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors MRF5S19130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19130SR3 Designed for PCN and PCS base station applications at frequencies from

sme50vb101m12x25l

Abstract: C10 PH wirewound resistor j10 NI-360
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

NIPPON CAPACITORS

Abstract: 369A-10
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF284 MRF284S RF Power Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from