MRF284SR1 Search Results

Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

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Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

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Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

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Abstract: 56-590-65-3B 369A-10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

369A-10

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Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

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Abstract: C10 PH
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

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Abstract: C10 PH wirewound resistor j10 NI-360
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

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Abstract: mj031 MJD32 MOTOROLA MRF284 SME50VB101 369A-10 variable capacitor CDR33BX104AKWS MRF284SR1 56-590-65-3B
Contextual Info: MOTOROLA O rder this docum ent by M RF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF284 MRF284SR1 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

2a258 transistor

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Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Contextual Info: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181

MOTOROLA SCR 1725

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Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

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Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

MRF181SR1

Contextual Info: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258

MRF373

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Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MHW6181

Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Contextual Info: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1