MOTOROLA B2060 Search Results

B2060

Abstract: MBRB2060CT SMD310
Contextual Info: MOTOROLA Order this document by MBRB2060CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's Rectifier MBRB2060CT D2PAK Surface Mount Power Package Motorola Preferred Device Employs the use of the Schottky Barrier principle with a platinum barrier metal.

Contextual Info: MOTOROLA Order this document by MBRB2060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Pow er R ec tifier MBRB2060CT D2PAK Surface Mount Power Package Motorola Preferred Device Employs the use of the Schottky Barrier principle with a platinum barrier metal.

B2060

Abstract: F2060C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifiers M B R F2060C T Motorola Preferred Device The SW ITCHM O DE Power R ectifier employs the Schottky Barrier principle In a large area m e ta l-to -silico n power diode. S ta te -o f-th e -a rt geom etry features

b2060

Abstract: schottky DIODE MOTOROLA B20100 b20100 schottky rectifier motorola mbr motorola b2060 b2060 Motorola b2080 b2070 B2090 MBR2080CT
Contextual Info: MOTOROLA Order this document by MBR2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

B2060

Abstract: b2060 Motorola 221D AN1040 MBRF2060CT TO220 HEATSINK
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

schottky b37 diode

Contextual Info: MOTOROLA Order th is docum ent by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

B20100

Abstract: B2060 b2090 motorola b2060 B20100 diode b20100 g b2060 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT S w itc h m o d e P o w e r R ectifiers . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

motorola b2060

Abstract: b2060 Motorola BRF206 brf2060
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S cho ttky Pow er R ectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features

Contextual Info: MOTOROLA Order this document by MBRB2060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Power Rectifier MBRB2060CT D2PAK Surface Mount Power Package M o to ro la P re fe rre d D e vic e Employs the use of the Schottky Barrier principle with a platinum barrier metal.

BRF2060CT

Abstract: B2060 F2060CT motorola b2060 f2060ct diode
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M B R F2060CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in