MOSFET Z-44 DATASHEET Search Results

smd diode 44a

Abstract: smd 2f IRFN044
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N-CHANNEL Ω HEXFET 60 Volt, 0.040Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

smd 2f

Abstract: IRFN9240 smd diode 2F 7A BVDSS
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1554 HEXFET POWER MOSFET IRFN9240 N-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

DIODE SMD 55a

Abstract: N CHANNEL MOSFET 10A 1000V transistor d 1556 IRFNG50
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1556 HEXFET POWER MOSFET IRFNG50 N-CHANNEL Ω HEXFET 1000 Volt, 2.0Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

diode smd ED 84

Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier

A3925

Contextual Info: 39253 ADVANCED DATASHEET –-3/31/03 Subject to change without notice 36-pin QSOP Pkg. (LQ) or 44-pin PLCC Pkg. (ED) ABSOLUTE MAXIMUM RATINGS Load Supply Voltages, VBAT, VDRAIN , VSW ……………………………. –0.6 to 60 V Logic Supply Voltage, VDD ………-0.3 to 6.5 V

BZV55C12

Contextual Info: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features

603al

Abstract: irfb3306 TMC603A schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE TMC603
Contextual Info: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features

capacitor 50k

Abstract: A3938 A3938KLQ A3938SEQ PLCC-32
Contextual Info: 3938 PRELIMINARY DATASHEET - 11/07/02 Subject to change without notice ABSOLUTE MAXIMUM RATINGS ( at TA = +25°C ) Load Supply Voltage, VBB . 50 V VREG (Transient) . 15 V Logic Input Voltage Range,

A3938

Abstract: A3938SEQ A3938SLQ PLCC-32
Contextual Info: 3938 PRELIMINARY DATASHEET - 11/07/02 Subject to change without notice ABSOLUTE MAXIMUM RATINGS ( at TA = +25°C ) Load Supply Voltage, VBB . 50 V VREG (Transient) . 15 V Logic Input Voltage Range,

IRFY9130C

Abstract: IRFY9130CM P-channel MOSFET 100V, 10 Amps
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: 3938 PRELIMINARY DATASHEET - 3/24/03 Subject to change without notice ABSOLUTE MAXIMUM RATINGS ( at TA = +25°C ) Load Supply Voltage, VBB . 50 V VREG (Transient) . 15 V Logic Input Voltage Range,

IRF9956

Abstract: IRF7303 IRF7313 IRF7503
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1559 IRF9956 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1

diode IN 34A

Abstract: IRFN150
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N-CHANNEL Ω HEXFET 100 Volt, 0.060Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

9418a

Abstract: irf 418a IRFN450
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

IRFN140

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1546 HEXFET POWER MOSFET IRFN140 N-CHANNEL Ω HEXFET 100 Volt, 0.077Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

IRFN250

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET POWER MOSFET IRFN250 N-CHANNEL Ω HEXFET 200 Volt, 0.100Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

IRFN9140

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1553 HEXFET POWER MOSFET IRFN9140 N-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

DIODE SMD 10A

Abstract: smd 2f IRFN340
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1550 HEXFET POWER MOSFET IRFN340 N-CHANNEL Ω HEXFET 400 Volt, 0.55Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

smd 2f

Abstract: IRFN440
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

DIODE SMD 55a

Abstract: ir mosfet smd package smd 2f IRFN054
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

IRFN240

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1548 HEXFET POWER MOSFET IRFN240 N-CHANNEL Ω HEXFET 200 Volt, 0.18Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

smd diode 39a

Abstract: SMD tr 2f IRFNG40
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1555 HEXFET POWER MOSFET IRFNG40 N-CHANNEL Ω HEXFET 1000 Volt, 3.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

Contextual Info: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical

IRF7316

Abstract: D 304 x
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1505 IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1