MOSFET TO92 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

TN0201K

Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

1N45B

Abstract: SSN1N45BTA SSN1N45B
Contextual Info: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFN214B IRFN214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Contextual Info: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

marking SH SOT23 mosfet

Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
Contextual Info: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501

US79

Abstract: B102 CECC00802 J-STD-020A US79KUA
Contextual Info: CMOS Power Hall IC Features and Benefits Built-in Reverse Voltage Protection Built-in RFI Filter Power Efficient CMOS and Power MOSFET Drivers allow 400mA without overheating Built-in Zener Diodes Protect Outputs Eliminates all Fan Components Eliminate PC Board

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

Contextual Info: AP01L60T-H-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement G BVDSS 700V RDS ON 13.5 ID 160mA RoHS Compliant & Halogen-Free S Description

GC2307

Contextual Info: Pb Free Plating Product CORPORATION GC2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/06/20 REVISED DATE : BVDSS RDS ON ID -16V 60m -4.0A Description The GC2307 provides the designer with the best combination of fast switching, low on-resistance and

Contextual Info: AP9770GT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS RDS ON Through Hole Type ID RoHS Compliant & Halogen-Free G -60V 500m -1.5A S Description Advanced Power MOSFETs from APEC provide the

"coil capacitance"

Contextual Info: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications

GC2301

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -20V 130m -2.6A Description The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

power mosfet 600v

Abstract: GC01L60
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600V 12 160mA Description The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device.

AP01L60T

Contextual Info: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

2n7000

Abstract: mosfet 2N7000 60PF 2N7000 TO-92
Contextual Info: WEITRON Small Signal MOSFET N-Channel 2N7000 3 DRAIN TO-92 Features: *Low On-Resistance : 5 Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V TYE *Fast Switching Speed : 10ns 2 GATE 1. SOURCE 2. GATE 3. DRAIN 1 1 2 3 SOURCE

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.

AP01L60AT

Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
Contextual Info: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold