LP0701N3 Search Results

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

to-92 mosfet 1A

Abstract: LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND
Contextual Info: LP0701 LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Dice -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND 7 Advanced MOS Technology

Contextual Info: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

mosfet n3

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

Voltage Regulator lm10

Abstract: 100 amp npn mosfet high gain low voltage PNP transistor LM10 op amp 2d TRANSISTOR datasheet 22k resistor 1/4 watt datasheet 2k resistor 2 watt datasheet 62M TEX diode r4 high gain low voltage NPN transistor
Contextual Info: LP07 Series Applications LP07 Series Application Note AN-D14 Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Engineer Introduction A1 is configured as a unity gain buffer for the 0.2V reference. The output of A1 is attenuated by R1 and R2 and is connected to the

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

Voltage Regulator lm10

Abstract: LM10 op amp LM10 LP07 LP0701N3
Contextual Info: AN-D14 Application Note Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Engineering Manager Introduction to the open-loop gain of A2. The output of A2 regulates the gate of LP07 for a VOUT of 0.2V x [R1/ R1 + R2 x (R4/R3 + 1)]. The resistor values are chosen (explained in detail in

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

LM10 EQUIVALENT

Abstract: 1225 TRANSISTOR REPLACEMENT 50 Watt MOSFET amplifier
Contextual Info: LP07 Series Application Note AN-D14 Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Manager Introduction with a closed-loop gain of R4 / R3 + 1 . The LP07 is configured as a common source amplifier, which functions as a series pass transistor while contributing additional gain to the open-loop gain

Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

LP0701LG-G

Abstract: 125OC LP0701 JEDEC drawing
Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

b0715

Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► Ultra-low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Freedom from secondary breakdown

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices