TN0201KL Search Results

TN0201KL Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TN0201KL	Vishay Siliconix	MOSFETs	Original	PDF	74.98KB	5
TN0201KL	Vishay Telefunken	N-Channel 20-V (D-S) MOSFET	Original	PDF	104.23KB	6
TN0201KL-E3	Vishay	Transistor Mosfet N-CH 20V 0.64A 3TO-226AA	Original	PDF	104.23KB	6
TN0201KL-TR1	Vishay	N-Channel 20-V (D-S) MOSFET	Original	PDF	74.99KB	5
TN0201KL-TR1-E3	Vishay	Transistor Mosfet N-CH 20V 0.64A 3TO-226AA T/R	Original	PDF	104.23KB	6

TN0201KL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TN0201KL Contextual Info: SPICE Device Model TN0201KL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	TN0201KL 18-Jul-08 TN0201KL	PDF
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V APPLICATIONS TN0201K TN0201KL 0.42	Original	TN0201K/TN0201KL TN0201K TN0201KL O-226AA O-236 OT-23) 0201KL TN02llectual 18-Jul-08	PDF
TN0201K Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236 Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35	Original	TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL S-40245--Rev. 16-Feb-04 TN0201K TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236	PDF
TN0201K Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236 Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35	Original	TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL 08-Apr-05 TN0201K TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236	PDF
TN0201K Abstract: TN0201KL TN0201KL-TR1 MOSFET SOT-23 Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35	Original	TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL 18-Jul-08 TN0201K TN0201KL TN0201KL-TR1 MOSFET SOT-23	PDF
TN0201K Abstract: 4327 AN609 TN0201KL Contextual Info: TN0201KL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	TN0201K TN0201KL AN609 TN0201KL TN0201K 04-Jan-08 4327	PDF