MOSFET PA LEAKAGE Search Results

7272

Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Contextual Info: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed

BUK9C10-55BIT

Contextual Info: D2 PA K-7 BUK9C10-55BIT N-channel TrenchPLUS logic level FET 6 August 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET technology. The device includes TrenchPLUS current sensing and integrated diodes

JESD22-A115

Abstract: 3C230L 3C230
Contextual Info: LF PA K PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

1C530L

Abstract: 1C530L mosfet
Contextual Info: LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

1C230L

Abstract: PSMN1R2-30YLC JESD22-A115
Contextual Info: LF PA K PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: IRFS340A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 400V Lower R0SK0N) : 0.437 £2 (Typ.) - 400 V

4C130L

Abstract: JESD22-A115 435M
Contextual Info: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: LF PA K PSMN2R2-30YLC N-channel 30 V 2.2mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 17 March 2011 Preliminary data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

1C530L

Abstract: JESD22-A115 PSMN1R5-30YLC 1C530L mosfet
Contextual Info: LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

2C230L

Abstract: psmn2r2-30ylc JESD22-A115 30YLC
Contextual Info: LF PA K PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

2C630L

Abstract: JESD22-A115 PSMN2R6-30YLC
Contextual Info: LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: LF PA K PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

Contextual Info: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 3 June 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56

p-channel 250V 16A power mosfet

Abstract: p-channel 250V power mosfet SFP9614 VGS-30V PCHANNEL LSC16
Contextual Info: SFP9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVqss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 pA Max. @ VDS = -250V

Contextual Info: SSF8N80A Advanced Power MOSFET FEATURES BVdss = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS = 800V

SSF4N90AS

Abstract: EL DRIVER 3-STAGE
Contextual Info: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V

tvn 610

Abstract: SSF45N20A
Contextual Info: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V

c125t

Abstract: SSH4N80
Contextual Info: SSH4N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax. @ VM = 800V

PSMN7R0-30YLC

Contextual Info: LF PA K PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch

COM150A

Abstract: COM250A COM350A COM450A diode GF M
Contextual Info: COM150A COM350A COM250A COM450A COTS COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PA C K A G E 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on)

Contextual Info: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: PA K 33 PSMN2R8-25MLC LF N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 1 — 16 May 2012 Preliminary data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is