435M Search Results

Contextual Info: GS8182D19/37BD-435M 18Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Military Temp 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package

Contextual Info: .435M A X . .335 MAX. r~ .3 7 5 M A X . ,4-OOMAX, •017 ! oo? DIA. 9 PINS .035 *.010 . 0 9 ^ *.oo5 D IA . FULL R .200 REV, 2 [— .375 MAX. H DCO 1 4 2 2 5 6 COIL: 6 25°C RESISTANCE NOMINAL VOLTAGE_ 12,0 VDC X2 4.3 VOC MAX. G A T E T U R N -O N _ _ 7,1 VDC

Contextual Info: .335 MAX. .435M AX. .280 MAX. .300 MAX. I—r FU 1 ff .500 MIN. ID .031 *.003 •017!oo?DIA. 9 PINS .035 *.oio — .475 MAX. .2 5 6 *0 0 5 .100 TYP. .0 9 4 *005 DIA. .156 *005 FULL R .200 |— h ~ .375 MAX. - H COIL: 0 25°C RESISTANCE REV, 1 CUSTOMER DATA SHEET

chebyshev 3dB

Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

tda power amplifier circuit diagram

Abstract: RF amplifier CIRCUIT DIAGRAM of 433 MHz SP000296466 433 MHz Power Amplifier CRYSTAL 433 433 e xtal
Contextual Info: Product Brief TDA 7100 T h e T D A 7 1 0 0 i s a s i n g l e c h i p A S K / F S K t r a n s m i tt e r operating in the 433 to 435MHz frequency band. The IC offers a high level of integration and needs only a few external components to build a complete transmitter. The device contains a fully integrated PLL synthesizer and a high

Contextual Info: 483mm 19.03in ISOMETRIC VIEW 445mm 17.52in 32mm 1.25in O 13mm 0.5in 92mm 3.62in 10mm 0.38in 435mm 17.14in 594mm 23.4in TOP VIEW 195mm 7.69in 200mm 7.88in REAR VIEW L.S VIEW FRONT VIEW HPLW26 PART NUMBERS PAINTED TEXTURED BLACK NOTES HPLW contains 4 corner supports along with corresponding front

Contextual Info: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaDDR-II+TM Burst of 2 SRAM Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR-II+ Interface • Common I/O bus • JEDEC-standard pinout and package

chebyshev 3dB

Abstract: transistor 81L AN561 SD1563 amplifier 250W
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

435M

Contextual Info: [MHF227 SERIES] For 14”,15” Color Monitor Part Name MHF227-31 MHF227-32A MHF227-63A Rating Voltage 28.0 KVD.C 26.0 KVD.C 26.0 KVD.C RT 435MΩ±15% 350MΩ±15% 360MΩ±15% R0 260 MΩ 210 MΩ 210 MΩ R1 25.7 MΩ 20.6 MΩ 0.0 MΩ R2 68.2 MΩ 54.6 MΩ

435mhz

Abstract: 424MHz
Contextual Info: Voltage Controlled Oscillators MW500-1693 424MHz to 435MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 424MHz to 435MHz 0.7/2.5 V 6 +/- 2 dBm 10 kHz Offset -96 typ dBc/Hz 100 kHz Offset -116 (typ) dBc/Hz Frequency Pushing 1 MHz/V Frequency Pulling

Contextual Info: .435M A X . .335 MAX. .3 7 5 MAX. .4 0 0 MAX. H— 017 DIA. 9 PINS .094 *005 DIA. .156 *005 FU LL R .200 |— K - .375M A X . COIL: REV, 1 0 25°C 1600 OHMS * 10% RESISTANCE 18.0 VDC NOMINAL VOLTAGE 4.3 VDC MAX. GATE TURN-ON _ 0.5 VDC MAX. GATE TURN-OFF _

Contextual Info: .3 3 5 MAX. .435M A X . .280 MAX. .3 0 0 MAX. ex CI TT 1 .5 0 0 MIN. D J_ .0 1 7 !$ ? DIA. 9 PINS .094 *.005 DIA. FU L L R .200 I— .375 MAX. - H C O IL : @ 2 5 ° C RESISTANCE NOMINAL VO LTAG E _ MUST O PERATE _ G ATE TURN-ON _ G ATE T U R N -O FF _

hittite h435

Abstract: HMC435MS8GE HMC435MS8G H435 435MS8GE resistor 100 Ohm RF Switch H435
Contextual Info: 435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications Features The 435MS8G / 435MS8GE is ideal for: • Basestation Infrastructure High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • MMDS & 3.5 GHz WLL Positive Control: 0/+5V

display 8 segment

Contextual Info: CRQ MU13001A MU13001C 3" SINGLE DIGIT NUM BERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW

H435

Abstract: HMC435 MSOP-86 435MS8GE HMC435MS8G HMC435MS8GE resistor 100 Ohm
Contextual Info: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points

8182T

Contextual Info: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaCIO DDR-II+TM Burst of 2 SRAM 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaCIO Interface • Common I/O bus

1A 5v input 5v output regulator

Abstract: TSX-11
Contextual Info: SANYO SEMICONDUCTOR 12E DI ?cic]?G7t, CORP LA5659 M onolithic Linear 1C 2170A Logic-Controlled 5V 1A 435m A Multi Voltage Regulator The LA5659 is a multi voltage regulator IC having a main output of 5V-1A and an auxiliary output of 5V-35mA. The main output can be turned ON/OFF with enable

Contextual Info: 433MHz Antenna +5dBi Fibreglass Rod Features • Freq Range 430-435MHz • Omni Directional • Active gain: +5dBi • Rugged Fibre Glass Rod • VSWR <1.8 • N Connector on base with; • 2m RG58 Lead to SMA Male • Dimensions: 1200 x 20mm • U-Bolts Mounting Supplied

MU13001A

Abstract: MU13001C
Contextual Info: MU13001A MU13001C 3" SINGLE DIGIT NUMBERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW 200mA

h435

Abstract: MSOP-86
Contextual Info: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points

Contextual Info: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V   IC = -200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile

TB0902A

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com SAW Filter 435MHz 70MHz BW SMD 5.0x5.0 mm MODEL NO.: TB0902A

Contextual Info: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V   IC = -100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020

VCO190-435MT

Abstract: 072-MHz
Contextual Info: VCO Product Specification Model: VCO190-435MT Rev: A Date: 4/22/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 400 435 470 MHz X 1 1.5 -35 ° to 85 ° C Remarks Tuning Voltage: 400 MHz