MOSFET P DGS Search Results

LP0801K1

Abstract: Diode SOT-23 Marking code B.V LP0801ND N mosfet sot-23 p mos sot23 MOSFET P-Channel sot-23 SS MARKING sot23 Diode SOT-23 marking 3V marking code SS SOT23 MOSFET DRIVER oni 350 SWITCH
Contextual Info: LP0801 ^ S u p e r ta x n i c . Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS /' BV DGS p DS ON *D(ON) (max) (min) VGS(th) (max) TO-236AB* Dice P 8U * -16.5V 12.0Q -200mA -1.0V LP0801K1

Contextual Info: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*

Contextual Info: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

DSS SOT23

Abstract: marking code MV mosfet SOT23 Diode SOT-23 marking 3V lp0801k1
Contextual Info: LP0801 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information p Order Number / Package B V dcs max (min) VGSflh) (max) TO-236AB* Die P8U * -16.5V 120 -200mA -1.0V LP0801K1 LP0801ND where * = 2-week alpha date code

VQ3001

Contextual Info: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*

VQ3001/VQ7254

Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q

Contextual Info: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad

MOSFET 923 54

Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
Contextual Info: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V

TQ3001

Abstract: VQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1
Contextual Info: VQ3001 VQ7254 Supertex inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information V GS th R d S (ON) b v dss/ Order Num ber / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Î2 2.0V -3.0V VQ3001N6 20V 3.0Î2 2.0V

EIGHT p-channel MOSFET ARRAY

Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
Contextual Info: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

Contextual Info: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

ap0140a

Abstract: 8 Channel Power Mosfet Array
Contextual Info: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*

Contextual Info: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =

Contextual Info: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

Contextual Info: . yjj Supertex inc 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information_ O rd er N um b er / Package BV qqs m in If B V DSS/ F*ds(on) (m ax) I dss* V ds = -100V Max -160V 700Q -15mA -1.5nA

EIGHT MOSFET ARRAY

Abstract: EIGHT n-channel MOSFET ARRAY
Contextual Info: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG

Contextual Info: mi BFC50 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 - A D P a cka g e O u tlin e. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Vpss ^D(cont) ^DS(on) 500V 23.0A 0.250 BSC Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

IF444

Abstract: SGSF544
Contextual Info: 7 G 2ci537 DGSTlflT Q SGS-THOMSON L i [O T O iD D i P 23.- o SG SF344/IF344 SG SF444/IF444/F544 S G S-THOMSON 3QE D FASTS WITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W IT C H IN G S PEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR O FF-LINE APPLIC A­