MOSFET N CHANNEL FOR 26 VOLT 52 AMP Search Results

4305 Transistor

Contextual Info: M^K M.S. KENNEDY CORP. 17 AMP, 400 VOLT 3 PHASE BRIDGE POWER HYBRID 4305 315 699-9201 8170 T hom pson Road • C icero, N.Y. 13039 FEATURES: • 400V, 17 Am p C apability • U ltra Low Therm al R esistance - Junction to Case - 1 . 1 °CA/V • High Pow er Dissipation C apability

Contextual Info: MOTOROLA Order this document by MTP52N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP52N06VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 52 AMPERES 60 VOLTS

MTP52N06V

Contextual Info: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP52N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM

ad 152 transistor

Abstract: MTP52N06 TMOS E-FET AN569 MTP52N06VL MTP52N06VL-D
Contextual Info: MOTOROLA Order this document by MTP52N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP52N06VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 52 AMPERES 60 VOLTS

TMOS E-FET

Abstract: AN569 MTP52N06V 10E03
Contextual Info: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP52N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM

hf class AB power amplifier mosfet

Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Contextual Info: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

mosfet based ac drive ckt diagram

Abstract: 200w power AB amplifier circuit diagram DIODE V10-20 2.1 channel amplifier ckt TDA2075A TDA2075 high power fet audio amplifier schematic TDA1400 TRIPATH 200w power amplifier PCB layout
Contextual Info: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion TDA2075A STEREO CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Preliminary Information Revision 0.9 – October 2005 GENERAL DESCRIPTION The TDA2075A is a two-channel, amplifier driver, that uses Tripath’s proprietary Digital Power Processing

J50 mosfet

Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

transistor C 4429

Abstract: diode datasheet IN4448 IN5822 diode power mosfet ic 12 volts for audio amplifier C 4429 transistor C 4429 equivalent voltage doubler using 555 timer 555 flasher circuit diode IN5822 HEXFET Power MOSFET DC Variable speed Motor Driver
Contextual Info: APPLICATION NOTE 28 TC4420/4429 UNIVERSAL POWER MOSFET INTERFACE IC By Ron Vinsant The TC4420/4429 are high power driver ICs in an 8-pin mini-dip package. These parts have additional improvements over the TC429 driver. Added features are 4 kV of ESD protection, latch-up protection of >1.5kA of reverse

Contextual Info: ULTRA HIGH VOLTAGE DUAL OPERATIONAL AMPLIFIER M .S .K E N N E D Y C O R P . 8170 Thompson Road Cicero, N.Y. 13039 315 699-920 FEATURES: • • • • • • • • MIL-PRF-38534 QUALIFIED Internally Compensated For Gains > 10 V/V Monolithic MOS Technology

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

6a3 diode zener

Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

mgb20n40cl

Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

MRF136

Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source

Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

TMOS E-FET

Abstract: MTB52N06V SMD310 AN569
Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM N–Channel Enhancement–Mode Silicon Gate

TMOS E-FET

Abstract: AN569 MTB52N06VL SMD310
Contextual Info: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06VL Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM

Contextual Info: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06VL Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM

SMD R5D diode

Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM N–Channel Enhancement–Mode Silicon Gate

uc3842 unitrode 100 watt

Abstract: 24v dc power supply with uc3842 UCC2800 application note buck schematic UC3842 note buck converter non isolated UNITRODE applications handbook uc3842 -96 UC3843 in non isolated flyback converter UC3843 application note buck uc3843 12v 5a supply design UC3843 in non isolated boost converter UC3842 application 24V
Contextual Info: UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 Low-Power BiCMOS Current-Mode PWM FEATURES DESCRIPTION • 100mA Typical Starting Supply Current The UCC1800/1/2/3/4/5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line

j35 fet

Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

mrf5015

Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device