MOSFET K72 Search Results

DS30120 Rev. 13

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

JESD22-A108C

Abstract: JESD22-A108-C JESD22A-101-B
Contextual Info: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

JESD22-A108C

Abstract: 2N7002K
Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

k72 diode

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description

2N7002-13-F

Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

diode K72

Abstract: K72 marking diode k72 diode
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance

k72 diode

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

2N7002 marking code 72

Abstract: 2n7002-7-f c72 c72 sot23 2N7002 marking code 72 APPLICATION NOTES MARKING CODE C72 K72 marking diode MARKING C72 2N7002-7-F k72 diode
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

mosfet k72

Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
Contextual Info: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: K72 Dimensions in inches and (millimeters)

k72 diode

Abstract: STK7002U stk7002 code k72
Contextual Info: STK7002U Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information

k72 diode

Abstract: code k72 mosfet k72 STK7002U
Contextual Info: STK7002U N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features  High density cell design for low RDS ON .  Voltage controlled small signal switch  High saturation current capability. Ordering Information Type NO.

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-363 H A h

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

transistor k72

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2P1 transistor

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage