MOSFET J 162 Search Results

20n60s1

Abstract: 60v 10a p type mosfet 20n60s
Contextual Info: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system

20N60S1

Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
Contextual Info: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

FMW20N60S1

Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Contextual Info: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

20N60S1

Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
Contextual Info: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2

PLUGGING BRAKING DIAGRAM

Abstract: lt1162 LT1160 55585-A2 LT3526
Contextual Info: D iD f G ^ IL I^ S E Final Electrical Specifications u n LT1160/LT1162 m TECHNOLOGY H alf-/F ull-B ridge N -C h a n n e l P o w e r MOSFET Drivers J u ly 1995 F€OTUR€S D C S C R IP T IO n • Floating Top Driver Switches Up to 60V ■ Drives Gate of Top N-Channel MOSFET

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

EPC-19 TRANSFORMER

Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
Contextual Info: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

AHB ZVS

Abstract: EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier
Contextual Info: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

EPC-19 TRANSFORMER

Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
Contextual Info: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing

D0331

Abstract: 527 MOSFET TRANSISTOR motorola 1n5b17 ba rn B4327
Contextual Info: 19-1075:Rev0; 6/96 •“ > k l> J X I> k l » WIT SV/3.3V or Adjustable, 100% Duty-Cyde, High-Efficiency, Step-Down DC-DC Controllers F eatu res 4 Low Dropout Voltage These step-down controllers drive an external P-channel MOSFET, allowing design flexibility for applications

8012g

Contextual Info: SEMICONDUCTOR KF17N50N TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

Contextual Info: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

HA1190

Contextual Info: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

C1413

Abstract: T039 package
Contextual Info: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C

Contextual Info: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

K1246

Abstract: 2SK1246 F5V50
Contextual Info: V X v ' J ~ X A 0|7 — M O S F E T VX S e r ie s Pow er MOSFET 2SK1246 O U T L IN E D IM E N S IO N S [F5V50] 500V 5A • A C l OOVmA^COX'f • 7 . ^ v ? V :7 £ S * E B S • '1 'V A - i' • Æ fë * R A T IN G S •Îfë ftil^ ÏE lfë « Absolute Maximum Ratings

Contextual Info: s e MIKRDn Absolute Maximum Ratings Symbol V rrm Ifsm l2t Tsolder Tvj, T stg Tvj, Tstg Conditions ' Values Units 1200 V 180 162 375 -5 5 + 150 A A^s °C SEMICELL CAL - Diode Chips3 SKCD 18C 120 I > 2 bondwires 300 nm 0 ) tp = 10 ms; sin; T j = 150 °C tp = 10 ms; sin; T j = 150 °C

MBR130LT3

Abstract: lt 16241 CTX10-4 WF-Series IRL540
Contextual Info: r r i m LTC1624 m TECHNOLOGY High Efficiency SO-8 N-Channel Switching R egulator C ontroller F€OTUR€S D € S C R IP TIO fl • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation

Contextual Info: IRFW/I630A FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) II

547 MOSFET

Abstract: *c1251c
Contextual Info: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V