MOSFET IRFZ48N Search Results

IRFZ48N

Abstract: IRFz48N MOSFET
Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

IRFZ48N

Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION

Contextual Info: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V

IRFZ48NL

Abstract: 1408B AN-994 IRFZ48NS
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

Contextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V

1408B

Abstract: AN-994 IRFZ48NL IRFZ48NS IRFZ48N
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

AN-994

Abstract: IRFZ48N IRFZ48NS
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V

IRFZ48N

Contextual Info: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description

marking F53

Abstract: IRFZ48N IRFZ48NL IRFZ48NS AN-994 Mosfet IRFZ48N
Contextual Info: PD - 9.1408A IRFZ48NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016Ω G ID = 64A

IRFz48N MOSFET

Abstract: IRFZ48N equivalent IRFZ48N
Contextual Info: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier

IRFz48N MOSFET

Abstract: IRFZ48N
Contextual Info: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier

IRFZ48NPBF

Contextual Info: PD - 94991 IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

Contextual Info: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

f1010e

Abstract: AN-994 IRFZ48N IRFZ48NS
Contextual Info: PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V RDS on = 0.016Ω G ID = 53A S Fifth Generation HEXFETs from International Rectifier

IRFZ48N

Abstract: equivalent IRFZ48N
Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve

IRFz48N MOSFET

Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

ixfh26n60q

Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY

IRF1010

Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

Contextual Info: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier