MOSFET IRF240 Search Results

mosfet IRF240

Abstract: mosfet to3 IRF240 LE17 power MOSFET IRF240
Contextual Info: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

power MOSFET IRF240

Abstract: mosfet IRF240 IRF240 FET
Contextual Info: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)

mosfet to3

Abstract: IRF240
Contextual Info: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)

datasheet for driver circuit for mosfet IRF240

Abstract: IRF240 TA17422 TB334
Contextual Info: IRF240 Data Sheet March 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET • 18A, 200V Formerly developmental type TA17422. Ordering Information PACKAGE 1584.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed,

mosfet to3

Abstract: IRF240 irf240 data free download mosfet IRF240
Contextual Info: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)

IRF240SM

Contextual Info: SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A 0.180W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

IRF240

Abstract: mosfet IRF240
Contextual Info: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

lg diode 88A

Abstract: IRF240SM
Contextual Info: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

ixfh26n60q

Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY

sot23 BS170

Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120

mosfet IRF240

Abstract: IRF240
Contextual Info: USI PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 18 AMP 200 VOLTS 0.18Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: S EM E IRF240SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

IRF240SMD

Contextual Info: SEME IRF240SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

irf630 irf640

Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Contextual Info: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший

mosfet IRF240

Abstract: IRF242 IRF240 IRF241 IRF243
Contextual Info: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O

mosfet IRF240

Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid

IRF243

Abstract: IRF240 IRF242 mosfet IRF240 IRF241
Contextual Info: 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R \ Tfl DE 17Tbm4S DDOSCm 4 | IRF240/241/242/243 IN C 98 D 0 5 0 9 9 - — D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times

1RF242

Abstract: mosfet IRF240 DIODE M4A irf240 IRF242 1rf240
Contextual Info: \ 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R Tfl DE 17Tbm4S DDOSCm 4 | - — IRF240/241/242/243 IN C 98 D 0 5 0 9 9 D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times

irf240

Contextual Info: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package