MOSFET GATE SOURCE VOLTAGE 20V Search Results

CMXDM7002A

Abstract: X02A 2N7002
Contextual Info: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

X02A

Abstract: CMXDM7002A 2N7002
Contextual Info: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

RD10

Abstract: WTV3585
Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change

CMLDM7002AG

Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

p-channel mosfet

Abstract: P CHANNEL POWER MOSFET P-Channel MOSFET -800v smd transistor 26
Contextual Info: Transistors IC SMD Type Complementary MOSFET Half-Bridge N- and P-Channel KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25

smd diode 74a

Abstract: BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage

4501ss

Abstract: rd15 WTK4501 RD 15 4501s
Contextual Info: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:

Contextual Info: Transistors IC SMD Type N- and P-Channel 20-V D-S MOSFET KI4511DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25

smd diode 39a

Contextual Info: IC IC SMD Type P-Channel 2.5-V G-S MOSFET KI5441DC Features TrenchFET Power MOSFET 2.5-V Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150

WTN9973

Contextual Info: WTN9973 Surface Mount N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.9 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN 60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE Features: 1 2 3 SOT-223 *Super high dense cell design for low RDS ON RDS(ON)<80mΩ@VGS=10V

2sk2859

Contextual Info: MOSFET SMD Type N-Channel Silicon MOSFET 2SK2859 Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage

bv42 transistor

Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

1HN04CH

Abstract: RL83
Contextual Info: 1HN04CH Ordering number : ENA0925 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 1HN04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

A0526

Abstract: 6HN04CH 6hn04 TC-00001292
Contextual Info: 6HN04CH Ordering number : ENA0526 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

MCH6321

Contextual Info: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

6HN04S

Abstract: 32608P 6hn04 it134
Contextual Info: 6HN04S Ordering number : ENA0527 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

A1039

Abstract: A10391 6hp04 6HP04CH A10393
Contextual Info: 6HP04CH Ordering number : ENA1039 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

Contextual Info: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

TC227

Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

2N7002 MARKING

Abstract: 2N7002 MARKING 702 2N7002
Contextual Info: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJ4953 P-Channel 30-V D-S MOSFET SOP8 Equivalent circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 Gate-Source Voltage

R6009ENJ

Contextual Info: R6009ENJ Nch 600V 9A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.535W ID 9A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6011ENJ Nch 600V 11A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.390W ID 11A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source