33E10 Search Results

33E10 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
F3001B7H111033E100		Amphenol Communications Solutions	Flex Connector, 0.50mm Pitch, Height 2.00mm, Right angle, Flip type, ZIF, 33 position, With MYLAR	PDF

33E10 Price and Stock

Filter by Manufacturer

Select Manufacturer


BACO Controls Inc 33E10 The 33E10 is a Normally Open (NO) contact block with screw terminals designed for use with non-illuminated heads.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	33E10		1,161			1 - 10 $9.58 100 $7.43 1000 $6.64 10000 $6.38	Buy Now
Verical	33E10		1,160		10	1 - 10 $12.13 100 $9.08 1000 $8.27 10000 $8.27	Buy Now
Onlinecomponents.com	33E10		1,161			1 - 10 $9.58 100 $7.43 1000 $6.64 10000 $6.38	Buy Now
BACO Controls Inc L21KA03-3E10 22mm Black 2 Pos Maint Sel Sw Chrome Bezel w/ 1 NO 3 Pos Clip
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	L21KA03-3E10		9			1 $26.98 10 $24.08 100 $21.44 1000 $20.87 10000 $20.87	Buy Now
TE Connectivity FN9233E-1-06 IEC Inlet AP Filter 250VAC 1A Faston Earth Line C MOQ Reduction
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FN9233E-1-06					1 - 10 - 100 $9.44 1000 $9.25 10000 $9.25	Buy Now
Newark	FN9233E-1-06	Bulk			120	1 - 10 - 100 - 1000 $10.52 10000 $10.52	Buy Now
RS	FN9233E-1-06	Bulk		16 Weeks	120	1 - 10 - 100 - 1000 $13.06 10000 $12.50	Get Quote
Sager	FN9233E-1-06				120	1 - 10 - 100 - 1000 $7.92 10000 $7.92	Buy Now
Fuji Electric Co Ltd CP33E/10N Circuit Protector - 10A - 3 Pole - 250VAC - 50/60Hz.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	CP33E/10N					1 $99.86 10 $93.95 100 $89.32 1000 $89.32 10000 $89.32	Buy Now
TE Connectivity FN9233E-10-06 10 Amp High Perf. Iec Inlet Filter W/ Earth Line Choke \| Schaffner FN9233E-10-06 MOQ Reduction
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FN9233E-10-06					1 - 10 - 100 $9.88 1000 $9.69 10000 $9.69	Buy Now
RS	FN9233E-10-06	Bulk		18 Weeks	120	1 - 10 - 100 - 1000 $14.45 10000 $13.82	Get Quote
Sager	FN9233E-10-06				1	1 $9.81 10 $9.81 100 $9.17 1000 $8.30 10000 $8.30	Buy Now

Find more 33E10 price and stock on Findchips.com

33E10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1800 IXYS Abstract: "chip level" 33e10 Contextual Info: MIO 1200-33E10 Advanced Technical Information IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300	Original	1200-33e10 1800 ixys chip level 33e10	PDF
1800 IXYS Contextual Info: MIO 1200-33E10 IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200	Original	1200-33e10 20110119a 1800 ixys	PDF
Contextual Info: MIO 1200-33E10 IC80 = 1200 A VCES = 3300 V VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200	Original	1200-33e10 20110119a	PDF
Contextual Info: MIO 1200-33E10 IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features IGBT VCES VGE = 0 V Maximum Ratings u Conditions 3300 V ± 20 V 1200 A 2400 A 10 µs -o Symbol	Original	1200-33e10 20110119a	PDF
75639p Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334 Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 639 , UFA 639 UFA 639 S bt A, 0V, 25 m, anraF wer OSTs) utho 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the	Original	hufa75639g3 hufa75639p3 hufa75639s3s 75639p +675639g 75639 75639s 19e1 hufa75639s3st tb334	PDF
AN9321 Abstract: AN9322 HUFA75639S3R4851 TB334 TC217 Contextual Info: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	hufa75639s3r4851 115opment an9321 an9322 +2tb334 tc217	PDF
baco 33e10 Abstract: IEC 60947-5-5 baco 33earl EN418 LWA0226 baco 36 led lamp 230v circuit diagram LBX17301 IEC/EN 60947-5-1 AC15 IEC 60947-5-1 Contextual Info: control & signalling • Complete range of pushbuttons, selector/key switches, pilot lights & control stations • Wide range of mushroom heads • Ø22mm hole fixing • Easy to install & quick to connect • Screw terminal, push fit, faston & PCB connection possibilities	Original	m16/20 en418 baco 33e10 iec 60947-5-5 +7baco 33earl lwa0226 baco 36 led lamp 230v circuit diagram lbx17301 iec/en 60947-5-1 ac15 iec 60947-5-1	PDF
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding	Original	huf75639g3 huf75639p3 huf75639s3s huf75639s3	PDF
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.	OCR Scan	huf75639g3 huf75639p3 huf75639s3s 54e-2 +698e-1 99e-1 97e-2 huf75639 95e-3 95e-2	PDF
R4851 Abstract: AN9321 AN9322 HUFA75639S3R4851 TB334 Contextual Info: HUFA75639S3R4851 Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UFA 639 R48 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	hufa75639s3r4851 r4851 an9321 an9322 +1tb334	PDF
AN7254 Abstract: AN7260 AN9321 AN9322 HAF70009 TB334 Contextual Info: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	haf70009 an7254 an7260 an9321 +2an9322 tb334	PDF
Esan Abstract: t33e Contextual Info: E-SAN E L EC TR O N IC CO LTD EME D • 3D37M0E □ □ □ 0 0 E 5 T m Active Delay Line ECL Interface 33E Series Specifications: • Delay tolerance • • • • • • • • Rise time Operating Temp. Supply Voltage Logic 1 O utput Logic 0 O utput	OCR Scan	3d37m0e 200mw 33e-010 33e-020 +833e-030 33e-040 33e-050 33e-060 33e-070 33e-080 esan t33e	PDF
75639p Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334 Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	hufa75639g3 hufa75639p3 hufa75639s3s 75639p +575639s 75639g 75639 hufa75639s3st tb334	PDF
Contextual Info: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	hufa75639s3r4851	PDF

75639s Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This	Original	huf75639g3 huf75639p3 huf75639s3s huf75639s3 +8o-263ab tb334 75639s 75639p an7254 kp56 75639g huf75639s3st	PDF
75639p Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	huf75639g3 huf75639p3 huf75639s3s 75639p +675639 75639g 75639s 504e3 tb334 huf75639s3st	PDF
75639G Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334 Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	huf75639g3 huf75639p3 huf75639s3s 75639g +475639p 75639s huf75639s3st tb334	PDF
AN7254 Abstract: AN9321 AN9322 HUF75639S3R4851 TB334 Contextual Info: HUF75639S3R4851 Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UF7 39S 485 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	huf75639s3r4851 an7254 an9321 an9322 +1tb334	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
75639p Abstract: 75639g Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	hufa75639g3 hufa75639p3 hufa75639s3s 75639p +175639g	PDF
75639P Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334 Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.	Original	huf75639g3 huf75639p3 huf75639s3s o-263ab +8330mm 100mm eia-481 75639p 75639g 75639s huf75639s3st tb334	PDF
75639s Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334 Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75639g3 huf75639p3 huf75639s3s huf75639s3 +675639s 75639p 75639 75639g huf75639s3st tb334	PDF
AN7254 Abstract: AN9321 AN9322 HUF75639S3R4851 TB334 Contextual Info: HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	huf75639s3r4851 115vopment an7254 an9321 +2an9322 tb334	PDF
AN7254 Abstract: AN7260 AN9321 AN9322 HUF75639S3R4851 TB334 Contextual Info: HUF75639S3R4851 TM Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per	Original	huf75639s3r4851 an7254 an7260 an9321 +2an9322 tb334	PDF

33E10 Search Results

33E10 Result Highlights (1)

33E10 Price and Stock

BACO Controls Inc 33E10

BACO Controls Inc L21KA03-3E10

TE Connectivity FN9233E-1-06

Fuji Electric Co Ltd CP33E/10N

TE Connectivity FN9233E-10-06

33E10 Datasheets Context Search

1800 IXYS

1800 IXYS

75639p

AN9321

baco 33e10

R4851

AN7254

Esan

75639p

75639s

75639p

75639G

AN7254

65e9 transistor

75639p

75639P

75639s

AN7254

AN7254