MOSFET A 4423 Search Results

Contextual Info: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO

Contextual Info: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO

5252 F mosfet

Abstract: TLP220
Contextual Info: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series

Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

mosfet 4423

Abstract: 4425 8 P-N mosfet NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P NCP4425 NCP4425DWR2
Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

4425 8-pin

Abstract: 4425 mosfet mosfet 4423 NCP4425DWR2 NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P
Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

Contextual Info: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS pro­ cess for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output

Contextual Info: CYStech Electronics Corp. Spec. No. : C423Q8 Issued Date : 2007.11.15 Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

IXLD4425

Abstract: IXLD4424 IXLD4425COE IXLD4429 mosfet igbt drivers theory IXLD4426 IXLD4423-28 power switch tl494 IXLD4425CPA TSC38C42
Contextual Info: □IXYS I X Y S CORP lflE D • HbfltEEb D0Q073S 1 I PRELIMINARY Dual High Speed MOSFET/IGBT Drivers IXLD4423/4424/4425 • 3 A Peak Drive Current IXLD4426/4427/4428 • 1.5 A Peak Drive Current General Description Features The IX LD 4423-28 family of buffer/drivers are CMOS devices

TPD*1039s

Abstract: TPD7001BF TPD2005F 5252 E 0903 TPD7203 zener diode reference guide highside switch array tpd1008sa TPD1039S tpd2007f
Contextual Info: Intelligent Power Devices PRODUCT GUIDE Power MOSFETs with Built-In Protection Function Outline • This power MOSFET incorporates a protection function using a newly-developed simple process. ● Chip Control Section Power Section ● Construction N-MOS and DMOS process

Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC 4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 fam ily of

MIC4424AJ

Abstract: 74Cxxx MIC4425AJ tl494 equivalent mic4423aj IC4424 5962-8850305PX
Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC 4423/4424/4425 fam ily of parts are CM OS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 fam ily of

GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

Contextual Info: New Product Guide Normally Closed Photorelays TLP4xxxG Series TLP4xxxG Series of photorelays feature a withstanding voltage of 350 V and incorporate normally closed 1-form-B MOSFET. 1-form-B, 2-form-B and 1-form-A/B are available for both DIP and SOP packages. The MOSFETs in those devices keep ON-state without LED emission.

4425CPA

Abstract: 4424M mosfet 4423 4425 B 4424 4424EPA mosfet 4425 4425 mosfet 4424E
Contextual Info: feluom TC4423 TC4424 TC4425 Semiconductor, Inc. 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS GENERAL DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Peak Output C u rre n t. 3A Wide Operating R a n g e .4.5V to 18V

TLP352

Abstract: 5252 F mosfet
Contextual Info: New Product Guide IPM/Power MOSFET Driver Couplers TLP102, TLP106, TLP352 and TLP356 The propagation delay of the newly-developed TLP102, TLP106, TLP352 and TLP356 devices is approximately half that of conventional IPM drivers. Toshiba guarantees a maximum propagation delay of 400 ns in the temperature

IC4423

Abstract: MIC4424AJ MIC4423BJ IC4423/4424/4425
Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 family of

ic4424

Abstract: 5962-8850305PX
Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 fam ily of

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

4424 ym

Abstract: MIC4423AJBQ MIC4424CN
Contextual Info: IEH e L MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

MIC4424AJ

Abstract: MIC4425AJ
Contextual Info: OCT 2 9 1990 MIC4423/4424/4425 -J , S ite s ,- j 3A Dual High Speed MOSFET Driver S E M I C O N D U C T O R THE INTELLIGENT POWER COMPANY GENERAL DESCRIPTION The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable ‘lough” CMOS process.