MOSFET 600V 25A Search Results

R6025FNZ1

Contextual Info: R6025FNZ1 Datasheet Nch 600V 25A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

FCH25N60

Abstract: FCH25N60N mosfet 600V 25A TO247s
Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCH25N60N

Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCI25N60N

Abstract: mosfet 600V 25A
Contextual Info: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCP25N60N

Abstract: F102 DIODE 83A mosfet 600V 25A
Contextual Info: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: R6025ANZ Nch 600V 25A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.15Ω ID ±25A PD 150W TO-3PF l Inner circuit l Features 1) Low on-resistance.

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

30nm60

Abstract: 30nm60n
Contextual Info: STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N N-channel 600V - 0.1Ω - 25A - TO-220/FP - TO-247 - D2/I2PAK second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS RDS on Max ID PW STB30NM60N 600 V <0.13Ω 25A 190 W STI30NM60N

Contextual Info: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

Contextual Info: FZ06BIA070FS target datasheet DC Boost Application flowSOL 0 BI 600V/25A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. MOSFET Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin FRED Typical average static loss as a function of

ixfh50n60

Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Contextual Info: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol

schematic diagram UPS

Abstract: schematic diagram UPS 600 Power free STY25NA60
Contextual Info: STY25NA60 N - CHANNEL 600V - 0.225 Ω - 25A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.24 Ω 25 A TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP

70n60

Abstract: IXFL70N60Q2
Contextual Info: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264

Contextual Info: Preliminary Technical Information IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 70A Ω 80mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions

st 23-1/36

Abstract: f25nm60n mosfet 600V 20A P25NM60N F25NM60 Part Marking STMicroelectronics P25NM60 w25nm60n 11A 650V MOSFET STB25NM60N
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

70n60

Abstract: IXFL70N60Q2
Contextual Info: IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 92mΩ 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings

F25NM60N

Abstract: P25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N W25NM60N 850mj
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

P25NM60N

Abstract: W25NM60N STF25NM60N
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

IXFN SOT227

Abstract: IXFN70N60Q2
Contextual Info: HiPerFETTM Power MOSFET Q2-Class IXFN70N60Q2 VDSS = 600V ID25 = 70A Ω RDS on ≤ 80mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings

IXFB70N60Q2

Abstract: 70n60
Contextual Info: IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

STB36NM60N

Abstract: 36NM60N
Contextual Info: STB36NM60N N-channel 600 V, 0.98 Ω, 25 A, MDmesh II Power MOSFET in D2PAK Preliminary data Features Type VDSS @ TJmax RDS on max ID PW STB36NM60N 600V <0.105Ω 32A 250W • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance