MOSFET 600V 20A 50 KHZ Search Results

Contextual Info: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 98mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

"VDSS 800V" 40A mosfet

Contextual Info: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
Contextual Info: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor

Contextual Info: 10-F006PPA020SB-M685B preliminary datasheet Output Inverter Application flowPIM0+PFC 2nd 600V/20A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 Typical average static loss as a function of output current

Contextual Info: 10-F006PPA020SB01-M685B10 preliminary datasheet Output Inverter Application flowPIM0+PFC 2nd 600V/20A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 Typical average static loss as a function of output current

igbt inverter welder schematic

Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field

Contextual Info: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

C667 transistor

Abstract: IRGBC40U TRANSISTOR BIPOLAR 400V 20A C-666
Contextual Info: kitemational g«»]Rectifier PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

10PH

Abstract: C685 DDBG473 IRGPC40U
Contextual Info: PD - 9.684A International m i Rectifier IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD - 9.683A International Ek>ri Rectifier IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD - 9.684A htemational gÖR]Rectifier IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses * Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGMC40F

Abstract: bipolar transistor td tr ts tf
Contextual Info: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses

IRGMC40U

Contextual Info: PD -90717B IRGMC40U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses

Contextual Info: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49mΩ max @ Tj = 25°C ID = 55A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: fZ T S G S -T H O M S O N K lIO T M O lg l ] M S T T B 2 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 20A V rrm 600V trr (typ) 55ns Vf K. 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

sic mosfet

Abstract: Microsemi MOSFET 1200V
Contextual Info: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 40mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

AN885 - "Brushless DC Motor Fundamentals"

Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
Contextual Info: M AN898 Determining MOSFET Driver Needs for Motor Drive Applications Author: Jamie Dunn Microchip Technology Inc. INTRODUCTION Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of

40N60A4D

Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
Contextual Info: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input

1RGPC40

Abstract: transistor c681 IRGPC40U C683 TRANSISTOR BIPOLAR 400V 20A C681 G682 mosfet 600V 20A 50 KHz G68-2 rg101
Contextual Info: International SœlRectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-ioss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Rg. 1 for Current vs. Frequency curve

APT50MC120JCU2

Contextual Info: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 34mΩ max @ Tj = 25°C ID = 71A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

Contextual Info: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 34mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Contextual Info: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg