MOSFET 500V 5A Search Results

FDPF7N50U

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V

FDPF7N50U

Contextual Info: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDP7N50U

Abstract: FDPF7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF7N50U

Abstract: FDP7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

STP8NM50FP

Abstract: STP8NM50
Contextual Info: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

FQPF5N50CF

Abstract: DATE CODE FAIRCHILD
Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

FQPF5N50CF

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

5N50FT

Abstract: 5N50T
Contextual Info: HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS ON =1.5W@VGS=10V, ID=2.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

STP8NM50FP

Contextual Info: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

3E12

Abstract: FRS440D FRS440H FRS440R 2E12
Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FQB5N50CF

Abstract: FQB5N50CFTF FQB5N50CFTM
Contextual Info: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

STP8NM50

Abstract: STP8NM50FP 1204 5a
Contextual Info: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP • ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

STP8NM50FP

Contextual Info: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is

2E12

Abstract: 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

STD5NM50

Abstract: STD5NM50-1
Contextual Info: STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE STD5NM50 STD5NM50-1 n n n n n n VDSS RDS on ID 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

STD5NM50

Contextual Info: STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE STD5NM50 STD5NM50-1 n n n n n n VDSS RDS on ID 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

f5n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

5n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the