MOSFET 3A 250V Search Results

FSS430

Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70

zener diode B5

Abstract: STD3PS25 STD3PS25-1
Contextual Info: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 • ■ ■ ■ ■ VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

MOSFET P-CH 250V 5A

Abstract: 4.7 B2 zener STD3PS25 STD3PS25-1
Contextual Info: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION STANDARD OUTLINE FOR EASY

TO-251 footprint

Abstract: Diode zener 3a STD3NM50 STD3NM50-1 IPAK
Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

TO-251 footprint

Abstract: STD3NM50 STD3NM50-1
Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

diode circuit diagram

Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

2E12

Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

STD3NM50

Abstract: STD3NM50-1
Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: 3E12 FRS430D FRS430H FRS430R 794V
Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

VIVA

Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

AOT3N50

Abstract: AOTF3N50
Contextual Info: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Features The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

747 diode

Abstract: 3N50Z
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

3N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 „ TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

AOT3N50

Abstract: AOTF3N50
Contextual Info: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.